Datasheet CBR6M-L010 (Central Semiconductor)

CBR6M-L010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: 6.0 AMP, 100 THRU 1000 VOLT
The CENTRAL SEMICONDUCTOR CBR6M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.
MARKING: FULL PART NUMBER CASE DM MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR6M SYMBOL -L010 -L020 -L040 -L060 -L080 -L100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TC=100°C) IO 6.0 A Peak Forward Surge Current IFSM 200 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 3.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TC=100°C 200 μA VF IF=6.0A 1.1 V R1 (11-October 2013)