Preliminary Datasheet EPC2302 (Efficient Power Conversion) - 3

eGaN® FET DATASHEET
EPC2302
Figure 1: Typical Output Characteristics at 25°C Figure 2: Typical Transfer Characteristics
400 400 350 350 25˚C 300 V 300 125˚C GS = 5 V V 250 GS = 4 V V V DS = 3 V DS 250 GS = 3 V V 200 GS = 2 V 200
– Drain Current (A)
150
– Drain Current (A)
150
I D I D
100 100 50 50 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: Typical RDS(on) vs. VGS for Various Drain Currents Figure 4: Typical RDS(on) vs. VGS for Various Temperatures
6 6
) Ω )
5 ID = 25 A
Ω
5 25˚C ID = 50 A 125˚C
ance (m
ID = 75 A
ance (m
4 I 4 I D = 100 A D = 50 A
ce Resist ur ce Resist
3
ur
3
So So to- to-
2 2
– Drain- – Drain-
1 1
R DS(on) R DS(on)
0 0 3.0 3.5 4.0 4.5 5.0 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
4000 10000 COSS = CGD + CSD CISS = CGD + CGS 3000 1000 CRSS = CGD COSS = CGD + CSD C 2000 100 ISS = CGD + CGS CRSS = CGD
Capacitance (pF) Capacitance (pF)
10 1000 1 00 25 50 75 100 0 25 50 75 100
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
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