Datasheet NTE102 (PNP), NTE103 (NPN) (NTE Electronics) - 2
| 制造商 | NTE Electronics |
| 描述 | Germanium Complementary Transistors Power Output, Driver TO−5 / TO−39 Type Package |
| 页数 / 页 | 2 / 2 — Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. … |
| 文件格式/大小 | PDF / 63 Kb |
| 文件语言 | 英语 |
Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. ON Characteristics
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文件文字版本
Electrical Characteristics (Cont’d):
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics
DC Current Gain hFE VCE = 150mV, IC = 12mA 30 80 − VCE = 200mV, IC = 24mA 24 90 − Collector−Emitter Saturation Voltage VCE(sat) IC = 12mA, IB = 0.4mA − 0.09 0.15 V IC = 24mA, IB = 1mA − 0.09 0.20 V Base−Emitter Voltage VBE IC = 12mA, IB = 0.4mA − 0.27 0.35 V IC = 24mA, IB = 1mA − 0.30 0.40 V
Small−Signal Characteristics
Alpha Cutoff Frequency fhfb VCB = 6V, IE = 1mA 4 25 − MHz Output Capacitance Cob VCB = 6V, IE = 1mA, f = 1MHz − 8 20 pF Input Impedance hie VCE = 6V, IE = 1mA, f = 1MHz − 3.6 − k Voltage Feedback Ratio hre − 8 − x 10−4 Small−Signal Current Gain hfe − 135 − Output Admittance hoe − 50 − mhos
Switching Characteristics
Delay Time td − 0.07 − s Rise Time tr − 0.12 − s Storage Time ts − 0.20 − s Fall Time tf − 0.10 − s Stored Base Charge Qsb − 300 1400 pC .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45 .031 (.793)
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics
DC Current Gain hFE VCE = 150mV, IC = 12mA 30 80 − VCE = 200mV, IC = 24mA 24 90 − Collector−Emitter Saturation Voltage VCE(sat) IC = 12mA, IB = 0.4mA − 0.09 0.15 V IC = 24mA, IB = 1mA − 0.09 0.20 V Base−Emitter Voltage VBE IC = 12mA, IB = 0.4mA − 0.27 0.35 V IC = 24mA, IB = 1mA − 0.30 0.40 V
Small−Signal Characteristics
Alpha Cutoff Frequency fhfb VCB = 6V, IE = 1mA 4 25 − MHz Output Capacitance Cob VCB = 6V, IE = 1mA, f = 1MHz − 8 20 pF Input Impedance hie VCE = 6V, IE = 1mA, f = 1MHz − 3.6 − k Voltage Feedback Ratio hre − 8 − x 10−4 Small−Signal Current Gain hfe − 135 − Output Admittance hoe − 50 − mhos
Switching Characteristics
Delay Time td − 0.07 − s Rise Time tr − 0.12 − s Storage Time ts − 0.20 − s Fall Time tf − 0.10 − s Stored Base Charge Qsb − 300 1400 pC .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45 .031 (.793)