Datasheet PMF170XP (Nexperia) - 2
制造商 | Nexperia |
描述 | 20 V, 1 A P-channel Trench MOSFET |
页数 / 页 | 15 / 2 — Nexperia. PMF170XP. 20 V, 1 A P-channel Trench MOSFET. 5. Pinning … |
修订版 | 04052017 |
文件格式/大小 | PDF / 717 Kb |
文件语言 | 英语 |
Nexperia. PMF170XP. 20 V, 1 A P-channel Trench MOSFET. 5. Pinning information. Table 2. Pinning information. Pin. Symbol Description
该数据表的模型线
文件文字版本
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Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D 2 S source 3 D drain G 1 2 S
SC-70 (SOT323)
017aaa094
6. Ordering information Table 3. Ordering information Type number Package Name Description Version
PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323
7. Marking Table 4. Marking codes Type number Marking code [1]
PMF170XP XD% [1] % = placeholder for manufacturing site code
8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb 25 °C [1] - -1 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -4 A Ptot total power dissipation Tamb = 25 °C [2] - 290 mW [1] - 360 mW Tsp = 25 °C - 1670 mW Tj junction temperature -55 150 °C PMF170XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 29 October 2013 2 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information