Datasheet PMF170XP (Nexperia) - 7

Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET
017aaa303 - 4 017aaa129 - 10- 3 - 4.5 V I V D GS = - 3.5 V (A) ID - 3.0 V (A) - 3 - 2.5 V - 10- 4 - 2.0 V (1) (2) (3) - 2 - 1.8 V - 10- 5 - 1 - 1.5 V 0 - 10- 6 0 - 1 - 2 - 3 - 4 0.0 - 0.5 - 1.0 - 1.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V
Fig. 6. Output characteristics: drain current as a
(1) minimum values
function of drain-source voltage; typical values
(2) typical values (3) maximum values
Fig. 7. Sub-threshold drain current as a function of gate-source voltage
017aaa304 500 017aaa305 600 RDSon (mΩ) RDSon 400 (mΩ) (1) 400 300 (2) (3) (1) 200 (4) (5) 200 100 (2) 0 0 -2.0 -2.5 -3.0 -3.5 -4.0 0 - 2 - 4 - 6 ID (A) VGS (V) Tj = 25 °C ID = -1 A (1) VGS = -2.5 V (1) Tj = 150 °C (2) VGS = -3.0 V (2) Tj = 25 °C (3) VGS = -3.5 V
Fig. 9. Drain-source on-state resistance as a function
(4) VGS = -4.0 V
of gate-source voltage; typical values
(5) VGS = -4.5 V
Fig. 8. Drain-source on-state resistance as a function of drain current; typical values
PMF170XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 29 October 2013 7 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information