Datasheet PDTC143Z (Nexperia) - 7
| 制造商 | Nexperia |
| 描述 | NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
| 页数 / 页 | 17 / 7 — Nexperia. PDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k. … |
| 修订版 | 07082018 |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
Nexperia. PDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k. , R2 = 47 k. 7. Characteristics. Table 8. Characteristics
该数据表的模型线
文件文字版本
link to page 7
Nexperia PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 47 k 7. Characteristics Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 50 V; IE = 0 A - - 100 nA current ICEO collector-emitter VCE = 30 V; IB = 0 A - - 1 A cut-off current VCE = 30 V; IB = 0 A; - - 5 A Tj = 150 C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 170 A current hFE DC current gain VCE = 5 V; IC = 10 mA 100 - - VCEsat collector-emitter IC = 5 mA; IB = 0.25 mA - - 100 mV saturation voltage VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.6 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 k R2/R1 bias resistor ratio 8 10 12 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - 2.5 pF f = 1 MHz f [1] T transition frequency VCE = 5 V; IC = 10 mA; - 230 - MHz f = 100 MHz [1] Characteristics of built-in transistor PDTC143Z_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 8 — 5 December 2011 7 of 17
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
Nexperia PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 k , R2 = 47 k 7. Characteristics Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 50 V; IE = 0 A - - 100 nA current ICEO collector-emitter VCE = 30 V; IB = 0 A - - 1 A cut-off current VCE = 30 V; IB = 0 A; - - 5 A Tj = 150 C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 170 A current hFE DC current gain VCE = 5 V; IC = 10 mA 100 - - VCEsat collector-emitter IC = 5 mA; IB = 0.25 mA - - 100 mV saturation voltage VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.6 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 k R2/R1 bias resistor ratio 8 10 12 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - 2.5 pF f = 1 MHz f [1] T transition frequency VCE = 5 V; IC = 10 mA; - 230 - MHz f = 100 MHz [1] Characteristics of built-in transistor PDTC143Z_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 8 — 5 December 2011 7 of 17
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents