Datasheet FDV303N (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Digital FET, N-Channel |
| 页数 / 页 | 7 / 4 — FDV303N. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. … |
| 修订版 | 5 |
| 文件格式/大小 | PDF / 270 Kb |
| 文件语言 | 英语 |
FDV303N. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. On−Resistance Variation with
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FDV303N TYPICAL CHARACTERISTICS
1.5 2 V = GS 4.5 V 2.5 3.5 (A) 1.2 3.0 V = 2. GS 0 V 2.0 ANCE 2.7 1.5 0.9 −RESIST 2.5 2.7 3.0 , NORMALIZED 3.5 0.6 (on) −SOURCE CURRENT 4.5 DS 1 −SOURCE ON R 1.5 0.3 D DRAIN I , DRAIN 0 0.5 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.2 V , DRAIN DS −SOURCE VOLTAGE (V) I , DRAIN CURRENT D (A)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.6 2 I =0.5 D A ID D = 0.5A I =0.5 A 1.4 V = GS 4.5 V ANCE 1.6 (W) 1.2 −RESIST ANCE 1.2 1 −RESIST 0.8 DS(ON) 125°C R , NORMALIZED −SOURCE ON 0.8 DS(on) 0.4 25°C DRAIN R , ON 0.6 0 −50 −25 0 25 50 75 100 125 150 1 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (°C) V , GS GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation Figure 4. On Resistance Variation with with Temperature Gate−To− Source Voltage
1 1 V = T DS 5.0 V J = −55°C 25°C V = GS 0 V T 0.8 125 J = 125°C °C (A) 0.1 (A) 25°C 0.6 −55°C 0.01 0.4 I , DRAIN CURRENT D 0.001 0.2 I , REVERSE DRAIN CURRENTS 0 0.0001 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 V , GA GS TE TO SOURCE VOLTAGE (V) V , BO SD DY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Figure 5. Transfer Characteristics Variation with Source Current and Temperature www.onsemi.com 4
1.5 2 V = GS 4.5 V 2.5 3.5 (A) 1.2 3.0 V = 2. GS 0 V 2.0 ANCE 2.7 1.5 0.9 −RESIST 2.5 2.7 3.0 , NORMALIZED 3.5 0.6 (on) −SOURCE CURRENT 4.5 DS 1 −SOURCE ON R 1.5 0.3 D DRAIN I , DRAIN 0 0.5 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.2 V , DRAIN DS −SOURCE VOLTAGE (V) I , DRAIN CURRENT D (A)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.6 2 I =0.5 D A ID D = 0.5A I =0.5 A 1.4 V = GS 4.5 V ANCE 1.6 (W) 1.2 −RESIST ANCE 1.2 1 −RESIST 0.8 DS(ON) 125°C R , NORMALIZED −SOURCE ON 0.8 DS(on) 0.4 25°C DRAIN R , ON 0.6 0 −50 −25 0 25 50 75 100 125 150 1 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (°C) V , GS GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation Figure 4. On Resistance Variation with with Temperature Gate−To− Source Voltage
1 1 V = T DS 5.0 V J = −55°C 25°C V = GS 0 V T 0.8 125 J = 125°C °C (A) 0.1 (A) 25°C 0.6 −55°C 0.01 0.4 I , DRAIN CURRENT D 0.001 0.2 I , REVERSE DRAIN CURRENTS 0 0.0001 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 V , GA GS TE TO SOURCE VOLTAGE (V) V , BO SD DY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Figure 5. Transfer Characteristics Variation with Source Current and Temperature www.onsemi.com 4