Datasheet FDN337N (Fairchild) - 4

制造商Fairchild
描述N-Channel Logic Level Enhancement Mode Field Effect Transistor
页数 / 页5 / 4 — Typical Electrical Characteristics (continued). Figure 7. Gate Charge …
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Typical Electrical Characteristics (continued). Figure 7. Gate Charge Characteristics

Typical Electrical Characteristics (continued) Figure 7 Gate Charge Characteristics

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Typical Electrical Characteristics (continued)
1000 5 I = 2.2A D V = 5V DS 500 4 15V 10V C iss 200 3 C oss 100 2 CAPACITANCE (pF) 50 f = 1 MHz 1 V = 0V C GS rss GSV , GATE-SOURCE VOLTAGE (V) 200.1 0.2 0.5 1 2 5 10 20 0 0 2 4 6 8 V , DRAIN TO SOURCE VOLTAGE (V) DS Q , GATE CHARGE (nC) g
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
20 50 1ms 10 SINGLE PULSE 5 10ms 40 RDS(ON) LIMIT R =270° C/W θJA 2 T = 25°C A 30 1 100ms 1s 0.3 20 10s POWER (W) DC 0.1 V = 4.5V GS 10 I , DRAIN CURRENT (A) D SINGLE PULSE 0.03 R =250 °C/W θJA T = 25°C A 0 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 0.1 0.5 1 2 5 10 20 50 SINGLE PULSE TIME (SEC) V , DRAI N-SOURCE VOLTAGE (V) DS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.5 0.2 0.2 R (t) = r(t) * R θJA θJA 0.1 R = 270 °C/W 0.1 θJA 0.05 0.05 0.02 P(pk) 0.02 0.01 t 0.01 1 Single Pulse t 2 0.005 T - T = P * R (t) J A θJA r(t), NORMALIZED EFFECTIVE Duty Cycle, D = t /t 0.002 1 2 TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. FDN337N Rev.C