Datasheet BC337, BC337-25, BC337-40 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Amplifier Transistors NPN Silicon |
| 页数 / 页 | 8 / 2 — BC337, BC337−25, BC337−40. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 8 |
| 文件格式/大小 | PDF / 187 Kb |
| 文件语言 | 英语 |
BC337, BC337−25, BC337−40. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
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BC337, BC337−25, BC337−40 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO 45 − − Vdc (IC = 10 mA, IB = 0) Collector−Emitter Breakdown Voltage V(BR)CES 50 − − Vdc (IC = 100 mA, IE = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mA, IC = 0) Collector Cutoff Current ICBO − − 100 nAdc (VCB = 30 V, IE = 0) Collector Cutoff Current ICES − − 100 nAdc (VCE = 45 V, VBE = 0) Emitter Cutoff Current IEBO − − 100 nAdc (VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 100 mA, VCE = 1.0 V) BC337 100 − 630 BC337−25 160 − 400 BC337−40 250 − 630 (IC = 300 mA, VCE = 1.0 V) 60 − − Base−Emitter On Voltage VBE(on) − − 1.2 Vdc (IC = 300 mA, VCE = 1.0 V) Collector−Emitter Saturation Voltage VCE(sat) − − 0.7 Vdc (IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance Cob − 15 − pF (VCB = 10 V, IE = 0, f = 1.0 MHz) Current−Gain − Bandwidth Product fT − 210 − MHz (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 0.7 D = 0.5 0.5 0.3 TRANSIENT 0.2 ANCE 0.2 0.1 qJC(t) = (t) qJC 0.1 0.05 qJC = 100°C/W MAX RESIST P(pk) q 0.07 0.02 JA(t) = r(t) qJA SINGLE PULSE q 0.05 JA = 375°C/W MAX t1 D CURVES APPLY FOR THERMAL 0.01 0.03 SINGLE PULSE t POWER 2 PULSE TRAIN SHOWN 0.02 , NORMALIZED EFFECTIVE DUTY CYCLE, D = t1/t2 READ TIME AT t1 r(t) TJ(pk) − TC = P(pk) qJC(t) 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS)
Figure 1. Thermal Response http://onsemi.com 2
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO 45 − − Vdc (IC = 10 mA, IB = 0) Collector−Emitter Breakdown Voltage V(BR)CES 50 − − Vdc (IC = 100 mA, IE = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mA, IC = 0) Collector Cutoff Current ICBO − − 100 nAdc (VCB = 30 V, IE = 0) Collector Cutoff Current ICES − − 100 nAdc (VCE = 45 V, VBE = 0) Emitter Cutoff Current IEBO − − 100 nAdc (VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 100 mA, VCE = 1.0 V) BC337 100 − 630 BC337−25 160 − 400 BC337−40 250 − 630 (IC = 300 mA, VCE = 1.0 V) 60 − − Base−Emitter On Voltage VBE(on) − − 1.2 Vdc (IC = 300 mA, VCE = 1.0 V) Collector−Emitter Saturation Voltage VCE(sat) − − 0.7 Vdc (IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance Cob − 15 − pF (VCB = 10 V, IE = 0, f = 1.0 MHz) Current−Gain − Bandwidth Product fT − 210 − MHz (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 0.7 D = 0.5 0.5 0.3 TRANSIENT 0.2 ANCE 0.2 0.1 qJC(t) = (t) qJC 0.1 0.05 qJC = 100°C/W MAX RESIST P(pk) q 0.07 0.02 JA(t) = r(t) qJA SINGLE PULSE q 0.05 JA = 375°C/W MAX t1 D CURVES APPLY FOR THERMAL 0.01 0.03 SINGLE PULSE t POWER 2 PULSE TRAIN SHOWN 0.02 , NORMALIZED EFFECTIVE DUTY CYCLE, D = t1/t2 READ TIME AT t1 r(t) TJ(pk) − TC = P(pk) qJC(t) 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS)
Figure 1. Thermal Response http://onsemi.com 2