Datasheet FDD6637 (Fairchild) - 3

FDD Electrical Characteristics
T = 25°C unless otherwise noted A
663 Symbol Parameter Test Conditions Min Typ Max Units 7 Drain–Source Diode Characteristics
V
35
SD Drain–Source Diode Forward V V Voltage GS = 0 V, IS = –14 A (Note 2) –0.8 –1.2
V P-
trr Diode Reverse Recovery Time IF = –14 A, diF/dt = 100 A/µs 28 ns Qrr Diode Reverse Recovery Charge 15 nC
C Notes: h 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
a
JA the drain pins. R
nn
θ is guaranteed by design while R is determined by the user's board design. JC θCA
e l P o
a) Rθ = 40°C/W when mounted on a b) R = 96°C/W when mounted JA θJA
w
1in2 pad of 2 oz copper on a minimum pad.
e rTr e
Scale 1 : 1 on letter size paper
n c 2.
Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
h
® PD
3.
Maximum current is calculated as: R
M
DS(ON) where P
OS
D is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
4.
BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FET
FDD6637 Rev. C(W) www.fairchildsemi.com