Datasheet APT40GF120J RD (APT) - 2
| 制造商 | APT |
| 描述 | Fast IGBT 1200V 60A |
| 页数 / 页 | 8 / 2 — APT40GF120JRD. DYNAMIC CHARACTERISTICS. Symbol. Characteristic. Test … |
| 文件格式/大小 | PDF / 118 Kb |
| 文件语言 | 英语 |
APT40GF120JRD. DYNAMIC CHARACTERISTICS. Symbol. Characteristic. Test Conditions. MIN. TYP. MAX. UNIT. Capacitance. Gate Charge
该数据表的模型线
文件文字版本
APT40GF120JRD DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C Input Capacitance
Capacitance
3450 4200 ies VGE = 0V C Output Capacitance oes 330 470 pF VCE = 25V C Reverse Transfer Capacitance res f = 1 MHz 230 350 Q Total Gate Charge 3
Gate Charge
g 325 490 VGE = 15V Q Gate-Emitter Charge ge 35 40 nC VCC = 0.5V CES Q Gate-Collector ("Miller ") Charge gc I 195 300 C = I C2 t Turn-on Delay Time
Resistive Switching (25°C)
d(on) 47 94 V = 15V t Rise Time GE r 178 360 V ns CC = 0.5V CES t Turn-off Delay Time d(off) 320 480 IC = I C2 t Fall Time R f G = 10Ω 190 380 t Turn-on Delay Time d(on) 45 90 tr Rise Time
Inductive Switching (150°C)
102 210 ns V = 0.66V t Turn-off Delay Time CLAMP(Peak) CES d(off) 440 880 VGE = 15V tf Fall Time 102 210 IC = I C2 E Turn-on Switching Energy R on G = 10Ω 6.4 13 T = +150°C E Turn-off Switching Energy J off 5.6 12 mJ E Total Switching Losses ts 12.0 25 t Turn-on Delay Time d(on)
Inductive Switching (25°C)
46 100 V = 0.66V t Rise Time CLAMP(Peak) CES r 115 230 V ns GE = 15V t Turn-off Delay Time d(off) 390 790 IC = I C2 t Fall Time R f G = 10Ω 100 210 T = +25°C E Total Switching Losses J ts 10.8 22 mJ gfe Forward Transconductance V 8 CE = 20V, IC = I S C2
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT
Junction to Case (IGBT) 0.32 RΘJC Junction to Case (FRED) 0.66 °C/W R Junction to Ambient 40 ΘJA 1.03 oz W Package Weight T 29.2 gm 10 lb•in Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 N•m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , R = 25Ω, L = 68µH, T = 25°C C C2 GE j 3 See MIL-STD-750 Method 3471 052-6256 Rev B 7-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.
C Input Capacitance
Capacitance
3450 4200 ies VGE = 0V C Output Capacitance oes 330 470 pF VCE = 25V C Reverse Transfer Capacitance res f = 1 MHz 230 350 Q Total Gate Charge 3
Gate Charge
g 325 490 VGE = 15V Q Gate-Emitter Charge ge 35 40 nC VCC = 0.5V CES Q Gate-Collector ("Miller ") Charge gc I 195 300 C = I C2 t Turn-on Delay Time
Resistive Switching (25°C)
d(on) 47 94 V = 15V t Rise Time GE r 178 360 V ns CC = 0.5V CES t Turn-off Delay Time d(off) 320 480 IC = I C2 t Fall Time R f G = 10Ω 190 380 t Turn-on Delay Time d(on) 45 90 tr Rise Time
Inductive Switching (150°C)
102 210 ns V = 0.66V t Turn-off Delay Time CLAMP(Peak) CES d(off) 440 880 VGE = 15V tf Fall Time 102 210 IC = I C2 E Turn-on Switching Energy R on G = 10Ω 6.4 13 T = +150°C E Turn-off Switching Energy J off 5.6 12 mJ E Total Switching Losses ts 12.0 25 t Turn-on Delay Time d(on)
Inductive Switching (25°C)
46 100 V = 0.66V t Rise Time CLAMP(Peak) CES r 115 230 V ns GE = 15V t Turn-off Delay Time d(off) 390 790 IC = I C2 t Fall Time R f G = 10Ω 100 210 T = +25°C E Total Switching Losses J ts 10.8 22 mJ gfe Forward Transconductance V 8 CE = 20V, IC = I S C2
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT
Junction to Case (IGBT) 0.32 RΘJC Junction to Case (FRED) 0.66 °C/W R Junction to Ambient 40 ΘJA 1.03 oz W Package Weight T 29.2 gm 10 lb•in Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 N•m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I = I , R = 25Ω, L = 68µH, T = 25°C C C2 GE j 3 See MIL-STD-750 Method 3471 052-6256 Rev B 7-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.