Datasheet APT40GF120J RD (APT) - 7
| 制造商 | APT |
| 描述 | Fast IGBT 1200V 60A |
| 页数 / 页 | 8 / 7 — APT40GF120JRD. Figure 2, Forward Voltage Drop vs Forward Current. Figure … |
| 文件格式/大小 | PDF / 118 Kb |
| 文件语言 | 英语 |
APT40GF120JRD. Figure 2, Forward Voltage Drop vs Forward Current. Figure 3, Reverse Recovery Charge vs Current Slew Rate
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APT40GF120JRD
200 5000 TJ = 100°C VR = 650V 160 4000 TJ = 25°C 120A TJ = 150°C 120 3000 TJ = 100°C 60A TJ = -55°C 80 2000 (AMPERES) (nano-COULOMBS) , FORWARD CURRENT I F 40 1000 , REVERSE RECOVERY CHARGE rr 30A Q 0 0 0 1 2 3 4 5 10 50 100 500 1000 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Forward Voltage Drop vs Forward Current Figure 3, Reverse Recovery Charge vs Current Slew Rate
60 2.0 TJ = 100°C VR = 650V 120A 1.6 45 Qrr 60A trr 1.2 30A 30 IRRM 0.8 (AMPERES) trr (NORMALIZED) 15 , DYNAMIC PARAMETERS f K 0.4 Q , REVERSE RECOVERY CURRENT rr I RRM 0 0.0 0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Reverse Recovery Current vs Current Slew Rate Figure 5, Dynamic Parameters vs Junction Temperature
300 1500 30 T T J = 100°C J = 100°C V V R = 650V R = 650V I 1250 F = 60A 25 240 120A 60A 1000 20 180 30A Vfr 750 15 120 (VOLTS) 500 10 (nano-SECONDS) (nano-SECONDS) , REVERSE RECOVERY TIME 60 , FORWARD RECOVERY TIME t rr 250 t t fr fr 5 , FORWARD RECOVERY VOLTAGE frV 0 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
2000 1000 500 (pico-FARADS) , JUNCTION CAPACITANCE J 100 C 500.01 0.05 0.1 0.5 1 5 10 50 100 200 VR, REVERSE VOLTAGE (VOLTS)
Figure 8, Junction Capacitance vs Reverse Voltage
052-6256 Rev B 7-2002
200 5000 TJ = 100°C VR = 650V 160 4000 TJ = 25°C 120A TJ = 150°C 120 3000 TJ = 100°C 60A TJ = -55°C 80 2000 (AMPERES) (nano-COULOMBS) , FORWARD CURRENT I F 40 1000 , REVERSE RECOVERY CHARGE rr 30A Q 0 0 0 1 2 3 4 5 10 50 100 500 1000 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Forward Voltage Drop vs Forward Current Figure 3, Reverse Recovery Charge vs Current Slew Rate
60 2.0 TJ = 100°C VR = 650V 120A 1.6 45 Qrr 60A trr 1.2 30A 30 IRRM 0.8 (AMPERES) trr (NORMALIZED) 15 , DYNAMIC PARAMETERS f K 0.4 Q , REVERSE RECOVERY CURRENT rr I RRM 0 0.0 0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Reverse Recovery Current vs Current Slew Rate Figure 5, Dynamic Parameters vs Junction Temperature
300 1500 30 T T J = 100°C J = 100°C V V R = 650V R = 650V I 1250 F = 60A 25 240 120A 60A 1000 20 180 30A Vfr 750 15 120 (VOLTS) 500 10 (nano-SECONDS) (nano-SECONDS) , REVERSE RECOVERY TIME 60 , FORWARD RECOVERY TIME t rr 250 t t fr fr 5 , FORWARD RECOVERY VOLTAGE frV 0 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
2000 1000 500 (pico-FARADS) , JUNCTION CAPACITANCE J 100 C 500.01 0.05 0.1 0.5 1 5 10 50 100 200 VR, REVERSE VOLTAGE (VOLTS)
Figure 8, Junction Capacitance vs Reverse Voltage
052-6256 Rev B 7-2002