Datasheet ZVN2106A (Diodes)

N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ZVN2106A ISSUE 2 – MARCH 94 TYPICAL CHARACTERISTICS
FEATURES * 60 Volt VDS 4 2.0 * R =2 VGS= Ω DS(on) 10V 1.8 lts) (Amps)t 9V o 1.6 3 8V 1.4 D G 1.2 S 7V oltage (V 2 1.0 rain Curren 6V V
E-Line
D ID= 0.8 1A
TO92 Compatible
ate 5V t 0.6 1
ABSOLUTE MAXIMUM RATINGS.
4V 0.4 0.5A 0.2 0.25A PARAMETER SYMBOL VALUE UNIT -On-S ) 3V Drain Source n 0 O 0 DS- Drain-Source Voltage VDS 60 V D( 0 1 2 3 4 5 V 0 2 4 6 8 10 I Continuous Drain Current at Tamb=25°C ID 450 mA VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Pulsed Drain Current IDM 8 A
Saturation Characteristics Voltage Saturation Characteristics
Gate Source Voltage V ± GS 20 V ) Power Dissipation at Tamb=25°C Ptot 700 mW (Ω e 10 4 Operating and Storage Temperature Range T VDS= j:Tstg -55 to +150 °C ps) nc m 10V ta is (At
ELECTRICAL CHARACTERISTICS (at T
3
amb = 25°C unless otherwise stated).
-Res PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. n O 2 1 ID= Drain-Source Breakdown BVDSS 60 V ID=1mA, VGS=0V ce 1A rain Curren 0.5A Voltage D ur o 0.25A ate 1 S t Gate-Source Threshold V n GS(th) 0.8 2.4 V ID=1mA, VDS= VGS Voltage rai -On-S) -D 0.1 n 0 Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V O 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 20 D( DS(ON I Zero Gate Voltage Drain IDSS 500 nA VDS=60 V, VGS=0 R VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Current 100 µA VDS=48 V, VGS=0V,
Transfer Characteristics
T=125°C(2)
On-resistance v gate-source voltage
On-State Drain Current(1) ID(on) 2 A VDS=18V, VGS=10V Static Drain-Source On-State RDS(on) 2 Ω VGS=10V,ID=1A 2.4 0.7 Resistance (1) 2.2 0.6 2.0
on)
Forward Transconductance g
DS(
fs 300 mS VDS=18V,ID=1A GS(th) 0.5 1.8 (1)(2) d V
nce R
n
ista
nce (S) a 1.6
es e R
VGS=10V 0.4 VDS=10V Input Capacitance (2) C n) iss 75 pF o 1.4 ID=1A ucta
n-Sourc
nd 0.3 DS( 1.2 o Common Source Output C
Drai
oss 45 pF VDS=18 V, VGS=0V, f=1MHz d R 1.0 VGS=VDS sc 0.2 Capacitance (2) e ID=1mA an 0.8 r
Gate
T
T
0.1
hresh
- Reverse Transfer Capacitance C
old Vo
rss 20 pF 0.6
ltage VGS
fs
(th)
g (2) ormalis 0 N 0.4-80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 Tj-Junction Temperature (C°) ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current
3-362 3-361