Datasheet BUZ71 (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET |
| 页数 / 页 | 8 / 3 — BUZ71. ELECTRICAL CHARACTERISTICS. Symbo l. Parameter. Test Con ditions. … |
| 文件格式/大小 | PDF / 89 Kb |
| 文件语言 | 英语 |
BUZ71. ELECTRICAL CHARACTERISTICS. Symbo l. Parameter. Test Con ditions. Min. Typ. Max. Unit
该数据表的模型线
文件文字版本
BUZ71 ELECTRICAL CHARACTERISTICS
(continued) SOURCE DRAIN DIODE
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
ISD Source-drain Current 17 A ISDM Source-drain Current 68 A (pulsed) VSD (∗) Forward On Voltage ISD = 28 A VGS = 0 1. 8 V trr Reverse Recovery ISD = 14 A di/dt = 100 A/µs 65 ns Time VDD = 30 V Tj = 150 oC Qrr Reverse Recovery 0.17 µC Charge (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8
(continued) SOURCE DRAIN DIODE
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
ISD Source-drain Current 17 A ISDM Source-drain Current 68 A (pulsed) VSD (∗) Forward On Voltage ISD = 28 A VGS = 0 1. 8 V trr Reverse Recovery ISD = 14 A di/dt = 100 A/µs 65 ns Time VDD = 30 V Tj = 150 oC Qrr Reverse Recovery 0.17 µC Charge (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8