Datasheet AO4468 (Alpha & Omega)
| 制造商 | Alpha & Omega |
| 描述 | 30V N-Channel MOSFET |
| 页数 / 页 | 5 / 1 — AO4468. 30V N-Channel MOSFET. General Description. Product Summary. … |
| 文件格式/大小 | PDF / 323 Kb |
| 文件语言 | 英语 |
AO4468. 30V N-Channel MOSFET. General Description. Product Summary. SOIC-8. Top View Bottom View
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AO4468 30V N-Channel MOSFET General Description Product Summary
The AO4468 combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide ID (at VGS=10V) 10.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 17mΩ and battery protection applications. RDS(ON) (at VGS = 4.5V) < 23mΩ ESD Protected * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested
SOIC-8
D
Top View Bottom View
D D D D G G S S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Dr D a r i a n- n S - ou o r u c r e e Vol o tag a e g VDS 30 3 V DS Gate-Source Voltage VGS ±20 V TA=25°C 10.5 Continuous Drain ID Current TA=70°C 8.5 A Pulsed Drain Current C IDM 50 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C EAS, EAR 18 mJ TA=25°C 3.1 PD W Power Dissipation B TA=70°C 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W RθJA Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W Rev.7.0: July 2013
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The AO4468 combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide ID (at VGS=10V) 10.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 17mΩ and battery protection applications. RDS(ON) (at VGS = 4.5V) < 23mΩ ESD Protected * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested
SOIC-8
D
Top View Bottom View
D D D D G G S S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Dr D a r i a n- n S - ou o r u c r e e Vol o tag a e g VDS 30 3 V DS Gate-Source Voltage VGS ±20 V TA=25°C 10.5 Continuous Drain ID Current TA=70°C 8.5 A Pulsed Drain Current C IDM 50 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C EAS, EAR 18 mJ TA=25°C 3.1 PD W Power Dissipation B TA=70°C 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W RθJA Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W Rev.7.0: July 2013
www.aosmd.com
Page 1 of 5