Datasheet CDM22010-650 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT |
| 页数 / 页 | 4 / 1 — CDM22010-650. SILICON. w w w. c e n t r a l s e m i . c o m. N-CHANNEL … |
| 文件格式/大小 | PDF / 887 Kb |
| 文件语言 | 英语 |
CDM22010-650. SILICON. w w w. c e n t r a l s e m i . c o m. N-CHANNEL POWER MOSFET. DESCRIPTION:. 10 AMP, 650 VOLT
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CDM22010-650 SILICON w w w. c e n t r a l s e m i . c o m N-CHANNEL POWER MOSFET DESCRIPTION: 10 AMP, 650 VOLT
The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge.
MARKING CODE: CDM10-650 TO-220 CASE APPLICATIONS: FEATURES: •
Power Factor Correction
•
High voltage capability (VDS=650V)
•
Motor drives
•
Low gate charge (Qgs=8.0nC)
•
Alternative energy inverters
•
Low rDS(ON) (0.88Ω)
•
Solid state lighting
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10 A Maximum Pulsed Drain Current, tp=10μs IDM 40 A Continuous Source Current (Body Diode) IS 10 A Maximum Pulsed Source Current (Body Diode) ISM 40 A Single Pulse Avalanche Energy (Note 1) EAS 608 mJ Power Dissipation PD 2.0 W Power Dissipation (TC=25°C) PD 156 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance JC 0.8 °C/W Thermal Resistance JA 62.5 °C/W Note 1: L=30mH, IAS=6.2A, VDD=50V, RG=25Ω, Initial TJ=25°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I
GSSF, IGSSR VGS=30V, VDS=0 10 100 nA IDSS VDS=650V, VGS=0 0.03 1.0 μA BVDSS VGS=0, ID=250μA 650 V VGS(th) VGS=VDS, ID=250μA 2.0 2.8 4.0 V VSD VGS=0, IS=10A 0.9 1.4 V rDS(ON) VGS=10V, ID=5.0A 0.88 1.0 Ω Crss VDS=25V, VGS=0, f=1.0MHz 1.2 pF Ciss VDS=25V, VGS=0, f=1.0MHz 1168 pF Coss VDS=25V, VGS=0, f=1.0MHz 129 pF R1 (18-August 2014)
The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge.
MARKING CODE: CDM10-650 TO-220 CASE APPLICATIONS: FEATURES: •
Power Factor Correction
•
High voltage capability (VDS=650V)
•
Motor drives
•
Low gate charge (Qgs=8.0nC)
•
Alternative energy inverters
•
Low rDS(ON) (0.88Ω)
•
Solid state lighting
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10 A Maximum Pulsed Drain Current, tp=10μs IDM 40 A Continuous Source Current (Body Diode) IS 10 A Maximum Pulsed Source Current (Body Diode) ISM 40 A Single Pulse Avalanche Energy (Note 1) EAS 608 mJ Power Dissipation PD 2.0 W Power Dissipation (TC=25°C) PD 156 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance JC 0.8 °C/W Thermal Resistance JA 62.5 °C/W Note 1: L=30mH, IAS=6.2A, VDD=50V, RG=25Ω, Initial TJ=25°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I
GSSF, IGSSR VGS=30V, VDS=0 10 100 nA IDSS VDS=650V, VGS=0 0.03 1.0 μA BVDSS VGS=0, ID=250μA 650 V VGS(th) VGS=VDS, ID=250μA 2.0 2.8 4.0 V VSD VGS=0, IS=10A 0.9 1.4 V rDS(ON) VGS=10V, ID=5.0A 0.88 1.0 Ω Crss VDS=25V, VGS=0, f=1.0MHz 1.2 pF Ciss VDS=25V, VGS=0, f=1.0MHz 1168 pF Coss VDS=25V, VGS=0, f=1.0MHz 129 pF R1 (18-August 2014)