Datasheet CMPZ5235B - CMPZ5261B (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | 0.5 Watt Zener Diode Chip |
| 页数 / 页 | 10 / 1 — PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE … |
| 文件格式/大小 | PDF / 744 Kb |
| 文件语言 | 英语 |
PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE PER 4 INCH WAFER. PRINCIPAL DEVICE TYPES
该数据表的模型线
文件文字版本
PROCESS
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m