Datasheet ADG5208, ADG5209 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| 页数 / 页 | 24 / 3 — Data Sheet. ADG5208/ADG5209. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 472 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG5208/ADG5209. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit
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Data Sheet ADG5208/ADG5209 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 28 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 40 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 180 210 245 ns max VS = 10 V; see Figure 33 tON (EN) 125 ns typ RL = 300 Ω, CL = 35 pF 150 185 215 ns max VS = 10 V; see Figure 35 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 210 230 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 25 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, QINJ 0.2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32 ADG5208 110 MHz typ ADG5209 240 MHz typ Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 CS (Off) 2.9 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208 34 pF typ VS = 0 V, f = 1 MHz ADG5209 17 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) ADG5208 37 pF typ VS = 0 V, f = 1 MHz ADG5209 21 pF typ VS = 0 V, f = 1 MHz Rev. C | Page 3 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide
Data Sheet ADG5208/ADG5209 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 28 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 40 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 180 210 245 ns max VS = 10 V; see Figure 33 tON (EN) 125 ns typ RL = 300 Ω, CL = 35 pF 150 185 215 ns max VS = 10 V; see Figure 35 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 210 230 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 25 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, QINJ 0.2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32 ADG5208 110 MHz typ ADG5209 240 MHz typ Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 CS (Off) 2.9 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208 34 pF typ VS = 0 V, f = 1 MHz ADG5209 17 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) ADG5208 37 pF typ VS = 0 V, f = 1 MHz ADG5209 21 pF typ VS = 0 V, f = 1 MHz Rev. C | Page 3 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide