Datasheet ADG5208-EP, ADG5209-EP (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| 页数 / 页 | 20 / 4 — ADG5208-EP/ADG5209-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C … |
| 修订版 | ADG5208-EP/ADG5209-EP: Enhanced Data Sheet |
| 文件格式/大小 | PDF / 424 Kb |
| 文件语言 | 英语 |
ADG5208-EP/ADG5209-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C −55°C to +125°C Unit. Test Conditions/Comments
该数据表的模型线
文件文字版本
link to page 16 link to page 16 link to page 16 link to page 16 link to page 17 link to page 17 link to page 17 link to page 17 link to page 18 link to page 16 link to page 16 link to page 5
ADG5208-EP/ADG5209-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5208-EP 37 pF typ VS = 0 V, f = 1 MHz ADG5209-EP 21 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 80 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 26 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 3.5 Ω typ VS = ±15 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 34 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 28 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 25 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 140 ns typ RL = 300 Ω, CL = 35 pF 170 195 220 ns max VS = 10 V; see Figure 31 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 140 170 195 ns max VS = 10 V; see Figure 33 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 205 220 ns max VS = 10 V; see Figure 33 Break-Before-Make Time Delay, tD 45 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 32 Charge Injection, QINJ 0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Rev. C | Page 4 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
ADG5208-EP/ADG5209-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5208-EP 37 pF typ VS = 0 V, f = 1 MHz ADG5209-EP 21 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 80 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 26 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 3.5 Ω typ VS = ±15 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 34 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 28 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 25 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 140 ns typ RL = 300 Ω, CL = 35 pF 170 195 220 ns max VS = 10 V; see Figure 31 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 140 170 195 ns max VS = 10 V; see Figure 33 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 205 220 ns max VS = 10 V; see Figure 33 Break-Before-Make Time Delay, tD 45 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 32 Charge Injection, QINJ 0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Rev. C | Page 4 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide