Datasheet ADG5208-EP, ADG5209-EP (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| 页数 / 页 | 20 / 6 — ADG5208-EP/ADG5209-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C … |
| 修订版 | ADG5208-EP/ADG5209-EP: Enhanced Data Sheet |
| 文件格式/大小 | PDF / 424 Kb |
| 文件语言 | 英语 |
ADG5208-EP/ADG5209-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C −55°C to +125°C Unit. Test Conditions/Comments
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ADG5208-EP/ADG5209-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 250 295 335 ns max VS = 8 V; see Figure 31 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 280 320 ns max VS = 8 V; see Figure 33 tOFF (EN) 165 ns typ RL = 300 Ω, CL = 35 pF 200 225 245 ns max VS = 8 V; see Figure 33 Break-Before-Make Time Delay, tD 95 ns typ RL = 300 Ω, CL = 35 pF 45 ns min VS1 = VS2 = 8 V; see Figure 32 Charge Injection, QINJ 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 30 ADG5208-EP 95 MHz typ ADG5209-EP 180 MHz typ Insertion Loss −8.9 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 CS (Off) 3.3 pF typ VS = 6 V, f = 1 MHz CD (Off) ADG5208-EP 38 pF typ VS = 6 V, f = 1 MHz ADG5209-EP 19 pF typ VS = 6 V, f = 1 MHz CD (On), CS (On) ADG5208-EP 41 pF typ VS = 6 V, f = 1 MHz ADG5209-EP 24 pF typ VS = 6 V, f = 1 MHz POWER REQUIREMENTS VDD = 13.2 V IDD 40 µA typ Digital inputs = 0 V or VDD 50 75 µA max VDD 9/40 V min/V max GND = 0 V, VSS = 0 V 1 Guaranteed by design; not subject to production test.
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 150 Ω typ VS = 0 V to 30 V, IS = −1 mA; see Figure 26 170 215 245 Ω max VDD = 32.4 V, VSS = 0 V On-Resistance Match Between 3.5 Ω typ VS = 0 V to 30 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 35 Ω typ VS = 0 V to 30 V, IS = −1 mA 55 65 70 Ω max LEAKAGE CURRENTS VDD = 39.6 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Rev. C | Page 6 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
ADG5208-EP/ADG5209-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 250 295 335 ns max VS = 8 V; see Figure 31 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 280 320 ns max VS = 8 V; see Figure 33 tOFF (EN) 165 ns typ RL = 300 Ω, CL = 35 pF 200 225 245 ns max VS = 8 V; see Figure 33 Break-Before-Make Time Delay, tD 95 ns typ RL = 300 Ω, CL = 35 pF 45 ns min VS1 = VS2 = 8 V; see Figure 32 Charge Injection, QINJ 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 30 ADG5208-EP 95 MHz typ ADG5209-EP 180 MHz typ Insertion Loss −8.9 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 CS (Off) 3.3 pF typ VS = 6 V, f = 1 MHz CD (Off) ADG5208-EP 38 pF typ VS = 6 V, f = 1 MHz ADG5209-EP 19 pF typ VS = 6 V, f = 1 MHz CD (On), CS (On) ADG5208-EP 41 pF typ VS = 6 V, f = 1 MHz ADG5209-EP 24 pF typ VS = 6 V, f = 1 MHz POWER REQUIREMENTS VDD = 13.2 V IDD 40 µA typ Digital inputs = 0 V or VDD 50 75 µA max VDD 9/40 V min/V max GND = 0 V, VSS = 0 V 1 Guaranteed by design; not subject to production test.
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 150 Ω typ VS = 0 V to 30 V, IS = −1 mA; see Figure 26 170 215 245 Ω max VDD = 32.4 V, VSS = 0 V On-Resistance Match Between 3.5 Ω typ VS = 0 V to 30 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 35 Ω typ VS = 0 V to 30 V, IS = −1 mA 55 65 70 Ω max LEAKAGE CURRENTS VDD = 39.6 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Rev. C | Page 6 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide