Datasheet ADG5233, ADG5234 (Analog Devices) - 4

制造商Analog Devices
描述High Voltage Latch-Up Proof, Triple/Quad SPDT Switches
页数 / 页22 / 4 — ADG5233/ADG5234. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to …
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ADG5233/ADG5234. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. ±20 V DUAL SUPPLY

ADG5233/ADG5234 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ±20 V DUAL SUPPLY

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ADG5233/ADG5234 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 70 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 28 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between Channels, 3.5 Ω typ VS = ±15 V, IS = −1 mA ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 33 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±15 V, VD =  15 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±15 V, VD =  15 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Channel On Leakage, ID (On), IS (On) ±0.08 nA typ VS = VD = ±15 V; see Figure 26 ±0.2 ±0.3 ±0.9 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 125 ns typ RL = 300 Ω, CL = 35 pF 155 180 200 ns max VS = 10 V; see Figure 33 tON (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 170 200 220 ns max VS = 10 V; see Figure 35 tOFF (EN) 125 ns typ RL = 300 Ω, CL = 35 pF 155 160 170 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 40 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, QINJ 0.7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −76 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Rev. D | Page 4 of 22 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide