Datasheet ADG5236 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | High Voltage Latch-Up Proof, Dual SPDT Switches |
| 页数 / 页 | 20 / 3 — Data Sheet. ADG5236. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 398 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG5236. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. Parameter. 25°C. −40°C to +85°C −40°C to +125°C Unit
该数据表的模型线
文件文字版本
link to page 14 link to page 14 link to page 14 link to page 14 link to page 15 link to page 15 link to page 15 link to page 15 link to page 15 link to page 14 link to page 14 link to page 14 link to page 14 link to page 4
Data Sheet ADG5236 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V max On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA, see Figure 25 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match 1.4 Ω typ VS = ±10 V, IS = −1 mA Between Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 38 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) 0.01 nA typ VS = ±10 V, VD = 10 V, see Figure 27 0.1 0.2 0.4 nA max Drain Off Leakage, ID (Off) 0.01 nA typ VS = ±10 V, VD = 10 V, see Figure 27 0.1 0.4 1.2 nA max Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±10 V, see Figure 24 0.2 0.4 1.2 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 230 280 315 ns max VS = 10 V, see Figure 30 tON 170 ns typ RL = 300 Ω, CL = 35 pF 215 265 300 ns max VS = 10 V, see Figure 32 tOFF 160 ns typ RL = 300 Ω, CL = 35 pF 185 205 225 ns max VS = 10 V, see Figure 32 Break-Before-Make Time Delay, tD 75 ns typ RL = 300 Ω, CL = 35 pF 30 ns min VS1 = VS2 = 10 V, see Figure 31 Charge Injection, QINJ −0.6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 33 Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 28 Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 26 −3 dB Bandwidth 266 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 29 Insertion Loss −7 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 29 CS (Off) 2.5 pF typ VS = 0 V, f = 1 MHz CD (Off) 12 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz Rev. B | Page 3 of 20 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, SxA, SxB, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Truth Tables for Switches Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide
Data Sheet ADG5236 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V max On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA, see Figure 25 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match 1.4 Ω typ VS = ±10 V, IS = −1 mA Between Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 38 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) 0.01 nA typ VS = ±10 V, VD = 10 V, see Figure 27 0.1 0.2 0.4 nA max Drain Off Leakage, ID (Off) 0.01 nA typ VS = ±10 V, VD = 10 V, see Figure 27 0.1 0.4 1.2 nA max Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±10 V, see Figure 24 0.2 0.4 1.2 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 230 280 315 ns max VS = 10 V, see Figure 30 tON 170 ns typ RL = 300 Ω, CL = 35 pF 215 265 300 ns max VS = 10 V, see Figure 32 tOFF 160 ns typ RL = 300 Ω, CL = 35 pF 185 205 225 ns max VS = 10 V, see Figure 32 Break-Before-Make Time Delay, tD 75 ns typ RL = 300 Ω, CL = 35 pF 30 ns min VS1 = VS2 = 10 V, see Figure 31 Charge Injection, QINJ −0.6 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 33 Off Isolation −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 28 Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 26 −3 dB Bandwidth 266 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 29 Insertion Loss −7 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 29 CS (Off) 2.5 pF typ VS = 0 V, f = 1 MHz CD (Off) 12 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 15 pF typ VS = 0 V, f = 1 MHz Rev. B | Page 3 of 20 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, SxA, SxB, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Truth Tables for Switches Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide