Datasheet ADG5408-EP, ADG5409-EP (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| 页数 / 页 | 18 / 4 — ADG5408-EP/ADG5409-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C. … |
| 文件格式/大小 | PDF / 340 Kb |
| 文件语言 | 英语 |
ADG5408-EP/ADG5409-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C. −55°C to +125°C. Unit. Test Conditions/Comments
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ADG5408-EP/ADG5409-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5408-EP 133 pF typ VS = 0 V, f = 1 MHz ADG5409-EP 81 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 μA typ Digital inputs = 0 V or VDD 55 80 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 12.5 Ω typ VS = ±15 V, IS = −10 mA; see Figure 24 14 17 21 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 0.3 Ω typ VS = ±15 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 2.3 Ω typ VS = ±15 V, IS = −10 mA 2.7 3.1 3.5 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off ) ±0.1 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = ±15 V; see Figure 23 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 300 Ω, CL = 35 pF 207 237 262 ns max VS = 10 V; see Figure 30 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 165 194 218 ns max VS = 10 V; see Figure 32 tOFF (EN) 133 ns typ RL = 300 Ω, CL = 35 pF 153 174 189 ns max VS = 10 V; see Figure 32 Break-Before-Make Time Delay, tD 38 ns typ RL = 300 Ω, CL = 35 pF 8 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection, QINJ 155 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 25 Rev. 0 | Page 4 of 18 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
ADG5408-EP/ADG5409-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5408-EP 133 pF typ VS = 0 V, f = 1 MHz ADG5409-EP 81 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 μA typ Digital inputs = 0 V or VDD 55 80 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 12.5 Ω typ VS = ±15 V, IS = −10 mA; see Figure 24 14 17 21 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 0.3 Ω typ VS = ±15 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 2.3 Ω typ VS = ±15 V, IS = −10 mA 2.7 3.1 3.5 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off ) ±0.1 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = ±15 V; see Figure 23 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 300 Ω, CL = 35 pF 207 237 262 ns max VS = 10 V; see Figure 30 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 165 194 218 ns max VS = 10 V; see Figure 32 tOFF (EN) 133 ns typ RL = 300 Ω, CL = 35 pF 153 174 189 ns max VS = 10 V; see Figure 32 Break-Before-Make Time Delay, tD 38 ns typ RL = 300 Ω, CL = 35 pF 8 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection, QINJ 155 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 25 Rev. 0 | Page 4 of 18 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE