Datasheet ADG1204 (Analog Devices) - 3

制造商Analog Devices
描述Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer
页数 / 页16 / 3 — Data Sheet. ADG1204. SPECIFICATIONS DUAL SUPPLY. Table 1. Y Version1. …
修订版C
文件格式/大小PDF / 462 Kb
文件语言英语

Data Sheet. ADG1204. SPECIFICATIONS DUAL SUPPLY. Table 1. Y Version1. −40°C to. Parameter. 25°C. +85°C. +125°C. Unit

Data Sheet ADG1204 SPECIFICATIONS DUAL SUPPLY Table 1 Y Version1 −40°C to Parameter 25°C +85°C +125°C Unit

该数据表的模型线

文件文字版本

link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 4 link to page 4
Data Sheet ADG1204 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Y Version1 −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 21 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels (ΔRON) 6 10 12 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA 57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (OFF) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (OFF) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (ON) ±0.02 nA typ VS = VD = ±10 V; see Figure 23 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or INH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ DYNAMIC CHARACTERISTICS2 Transition Time, tTRANS 120 ns typ RL = 300 Ω, CL = 35 pF 150 180 200 ns max VS = 10 V; see Figure 24 tON (EN) 70 ns typ RL = 300 Ω, CL = 35 pF 85 100 110 ns max VS = 10 V; see Figure 26 tOFF (EN) 90 ns typ RL = 300 Ω, CL = 35 pF 110 135 155 ns max VS = 10 V; see Figure 26 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V; see Figure 25 Charge Injection −0.7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 27 Off Isolation 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz; see Figure 31 Bandwidth −3 dB 800 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 29 CS (OFF) 1.2 pF typ f = 1 MHz, VS = 0 V 1.5 pF max f = 1 MHz, VS = 0 V CD (OFF) 3.6 pF typ f = 1 MHz, VS = 0 V 4.2 pF max f = 1 MHz, VS = 0 V CD, CS (ON) 5.5 pF typ f = 1 MHz, VS = 0 V 6.5 pF max f = 1 MHz, VS = 0 V Rev. C | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TRUTH TABLE TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE