Datasheet ADG1211, ADG1212, ADG1213 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Capacitance, Low Charge Injection ±15 V/+12 V iCMOS Quad SPST Switches |
| 页数 / 页 | 16 / 3 — Data Sheet. ADG1211/ADG1212/ADG1213. SPECIFICATIONS DUAL SUPPLY. Table 1. … |
| 修订版 | D |
| 文件格式/大小 | PDF / 380 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG1211/ADG1212/ADG1213. SPECIFICATIONS DUAL SUPPLY. Table 1. Y Version1. −40°C to. Parameter. 25°C. +85°C. +125°C. Unit
该数据表的模型线
文件文字版本
link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 13 link to page 13 link to page 13 link to page 13 link to page 4 link to page 4
Data Sheet ADG1211/ADG1212/ADG1213 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Y Version1 −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 20 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 2.5 Ω typ VS = ±10 V, IS = −1 mA Channels (∆RON) 6 10 11 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA 57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 21 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 21 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ DYNAMIC CHARACTERISTICS2 tON 110 ns typ RL = 300 Ω, CL = 35 pF 130 160 195 ns max VS = 10 V; see Figure 23 tOFF 85 ns typ RL = 300 Ω, CL = 35 pF 115 130 150 ns max VS = 10 V; see Figure 23 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF (ADG1213 Only) 10 ns min VS1 = VS2 = 10 V; see Figure 24 Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 25 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz −3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz 1.1 pF max VS = 0 V, f = 1 MHz CD (Off) 1 pF typ VS = 0 V, f = 1 MHz 1.2 pF max VS = 0 V, f = 1 MHz CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz 3 pF max VS = 0 V, f = 1 MHz Rev. D | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TERMINOLOGY TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet ADG1211/ADG1212/ADG1213 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Y Version1 −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 20 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 2.5 Ω typ VS = ±10 V, IS = −1 mA Channels (∆RON) 6 10 11 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA 57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 21 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 21 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ DYNAMIC CHARACTERISTICS2 tON 110 ns typ RL = 300 Ω, CL = 35 pF 130 160 195 ns max VS = 10 V; see Figure 23 tOFF 85 ns typ RL = 300 Ω, CL = 35 pF 115 130 150 ns max VS = 10 V; see Figure 23 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF (ADG1213 Only) 10 ns min VS1 = VS2 = 10 V; see Figure 24 Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 25 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz −3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz 1.1 pF max VS = 0 V, f = 1 MHz CD (Off) 1 pF typ VS = 0 V, f = 1 MHz 1.2 pF max VS = 0 V, f = 1 MHz CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz 3 pF max VS = 0 V, f = 1 MHz Rev. D | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TERMINOLOGY TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE