Datasheet ADG1212-EP (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS Quad SPST Switches |
| 页数 / 页 | 12 / 3 — Enhanced Product. ADG1212-EP. SPECIFICATIONS DUAL SUPPLY. Table 1. −40°C … |
| 修订版 | B |
| 文件格式/大小 | PDF / 337 Kb |
| 文件语言 | 英语 |
Enhanced Product. ADG1212-EP. SPECIFICATIONS DUAL SUPPLY. Table 1. −40°C to −55°C to. Parameter. 25°C. +85°C. +125°C. Unit
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Enhanced Product ADG1212-EP SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. −40°C to −55°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 15 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between Channels (∆RON) 2.5 Ω typ VS = ±10 V, IS = −1 mA 6 10 11 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA 57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±10 V, VD = ±10 V; see Figure 11 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±10 V, VD = ±10 V; see Figure 11 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 12 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ DYNAMIC CHARACTERISTICS1 tON 65 ns typ RL = 300 Ω, CL = 35 pF 80 95 110 ns max VS = 10 V; see Figure 18 tOFF 80 ns typ RL = 300 Ω, CL = 35 pF 100 115 135 ns max VS = 10 V; see Figure 18 Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 19 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 13 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 14 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz; see Figure 17 −3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 16 CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz 1.1 pF max VS = 0 V, f = 1 MHz CD (Off) 1 pF typ VS = 0 V, f = 1 MHz 1.2 pF max VS = 0 V, f = 1 MHz CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz 3 pF max VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max IDD 220 µA typ Digital inputs = 5 V 420 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max ISS 0.001 µA typ Digital inputs = 5 V 1.0 µA max 1 Guaranteed by design, not subject to production test. Rev. B | Page 3 of 12 Document Outline Features Enhanced Product Features Applications General Description Functional Block Diagram Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
Enhanced Product ADG1212-EP SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. −40°C to −55°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 15 190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between Channels (∆RON) 2.5 Ω typ VS = ±10 V, IS = −1 mA 6 10 11 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V/0 V/+5 V; IS = −1 mA 57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±10 V, VD = ±10 V; see Figure 11 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±10 V, VD = ±10 V; see Figure 11 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 12 ±0.1 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ DYNAMIC CHARACTERISTICS1 tON 65 ns typ RL = 300 Ω, CL = 35 pF 80 95 110 ns max VS = 10 V; see Figure 18 tOFF 80 ns typ RL = 300 Ω, CL = 35 pF 100 115 135 ns max VS = 10 V; see Figure 18 Charge Injection −0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 19 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 13 Channel-to-Channel Crosstalk 90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 14 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz; see Figure 17 −3 dB Bandwidth 1000 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 16 CS (Off) 0.9 pF typ VS = 0 V, f = 1 MHz 1.1 pF max VS = 0 V, f = 1 MHz CD (Off) 1 pF typ VS = 0 V, f = 1 MHz 1.2 pF max VS = 0 V, f = 1 MHz CD, CS (On) 2.6 pF typ VS = 0 V, f = 1 MHz 3 pF max VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max IDD 220 µA typ Digital inputs = 5 V 420 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max ISS 0.001 µA typ Digital inputs = 5 V 1.0 µA max 1 Guaranteed by design, not subject to production test. Rev. B | Page 3 of 12 Document Outline Features Enhanced Product Features Applications General Description Functional Block Diagram Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide