link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 12 link to page 13 link to page 13 link to page 13 link to page 13 link to page 12 link to page 12 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 Data SheetADG633SPECIFICATIONS DUAL-SUPPLY OPERATION VDD = +5 V, VSS = −5 V, GND = 0 V, TA = −40°C to +125°C, unless otherwise noted. Table 1. Parameter+25°C−40°C to +85°C−40°C to +125°CUnitTest Conditions/Comments ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance, RON 52 Ω typ VS = ±4.5 V, IS = 1 mA; see Figure 20 75 90 100 Ω max VS = ±4.5 V, IS = 1 mA; see Figure 20 On-Resistance Match 0.8 Ω typ VS = +3.5 V, IS = 1 mA Between Channels, ΔRON 1.3 1.8 2 Ω max VS = +3.5 V, IS = 1 mA On-Resistance Flatness, RFLAT(ON) 9 Ω typ VDD = +5 V, VSS = −5 V, VS = ±3 V, IS = 1 mA 12 13 14 Ω max VDD = +5 V, VSS = −5 V, VS = ±3 V, IS = 1 mA LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS(OFF) ±0.005 nA typ VD = ±4.5 V, VS = +4.5 V; see Figure 21 ±0.2 ±5 nA max VD = ±4.5 V, VS = +4.5 V; see Figure 21 Drain Off Leakage, ID(OFF) ±0.005 nA typ VD = ±4.5 V, VS = + 4.5 V; see Figure 22 ±0.2 ±5 nA max VD = ±4.5 V, VS = + 4.5 V; see Figure 22 Channel On Leakage, ID(ON), IS(ON) ±0.005 nA typ VD = VS = ±4.5 V; see Figure 23 ±0.2 ±5 nA max VD = VS = ±4.5 V; see Figure 23 DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±1 μA max VIN = VINL or VINH Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 60 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 24 90 110 130 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 24 tON (EN) 70 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 26 95 120 135 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 26 tOFF (EN) 25 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 26 40 45 50 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V; see Figure 26 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; see Figure 25 10 ns min RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; see Figure 25 Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 27 4 pC max VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 27 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 −3 dB Bandwidth 580 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 29 CS(OFF) 4 pF typ f = 1 MHz CD(OFF) 7 pF typ f = 1 MHz CD(ON), CS(ON) 12 pF typ f = 1 MHz POWER REQUIREMENTS2 VDD = +5.5 V, VSS = −5.5 V IDD 0.01 μA typ Digital inputs = 0 V or 5.5 V 1 μA max Digital inputs = 0 V or 5.5 V ISS 0.01 μA typ Digital inputs = 0 V or 5.5 V 1 μA max Digital inputs = 0 V or 5.5 V 1 Guaranteed by design; not subject to production test. 2 The device is fully specified at a ±5 V dual supply and at 5 V and 3.3 V single supplies. It is possible to operate the ADG633 with unbalanced supplies or at other voltage supplies ( ±2 V to ±6 V, and 2 V to 12 V); however, the switch characteristics change. These changes include, but are not limited to: analog signal range, on resistance, leakage, VINL, VINH, and switching times. The optimal power-up sequence for the device is: ground, VDD, VSS, and then the digital inputs, before applying the analog input signal. Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL-SUPPLY OPERATION SINGLE-SUPPLY OPERATION ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE NOTES NOTES