Datasheet ADG658, ADG659 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | +3 V/+5 V/±5 V CMOS 4-and 8-Channel Analog Multiplexers |
| 页数 / 页 | 20 / 3 — Data Sheet. ADG658/ADG659. SPECIFICATIONS DUAL SUPPLY. Table 1. B … |
| 修订版 | D |
| 文件格式/大小 | PDF / 397 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG658/ADG659. SPECIFICATIONS DUAL SUPPLY. Table 1. B Version. Y Version. −40°C. Parameter. +25°C. to +85°C. to+125°C Unit
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Data Sheet ADG658/ADG659 SPECIFICATIONS DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. B Version Y Version −40°C −40°C Parameter +25°C to +85°C to+125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance (RON) 45 Ω typ VS = ±4.5 V, IS = 1 mA; see Figure 21 75 90 100 Ω max On Resistance Match between 1.3 Ω typ Channels (∆RON) 3 3.2 3.5 Ω max VS = 3.5 V, IS = 1 mA On Resistance Flatness (RFLAT(ON)) 10 Ω typ VDD = +5 V, VSS = −5 V; 16 17 18 Ω max VS = ±3 V, IS = 1 mA LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source OFF Leakage IS (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see Figure 22 ±0.2 ±5 nA max Drain OFF Leakage ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see Figure 23 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; see Figure 24 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±1 µA max CIN, Digital Input Capacitance 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 80 ns typ RL = 300 Ω, CL = 35 pF 115 140 165 ns max VS = 3 V; see Figure 25 tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF 115 140 165 ns max VS = 3 V; see Figure 27 tOFF (EN) 30 ns typ RL = 300 Ω, CL = 35 pF 45 50 55 ns max VS = 3 V; see Figure 27 Break-Before-Make Time Delay, tBBM 50 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V; see Figure 26 Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω, 4 pC max CL = 1 nF; see Figure 28 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz Channel-to-Channel Crosstalk (ADG659) −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 −3 dB Bandwidth ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 ADG659 400 MHz typ Rev. D | Page 3 of 20 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY 5 V SINGLE SUPPLY 2.7 V TO 3.6 V SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS
Data Sheet ADG658/ADG659 SPECIFICATIONS DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. B Version Y Version −40°C −40°C Parameter +25°C to +85°C to+125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance (RON) 45 Ω typ VS = ±4.5 V, IS = 1 mA; see Figure 21 75 90 100 Ω max On Resistance Match between 1.3 Ω typ Channels (∆RON) 3 3.2 3.5 Ω max VS = 3.5 V, IS = 1 mA On Resistance Flatness (RFLAT(ON)) 10 Ω typ VDD = +5 V, VSS = −5 V; 16 17 18 Ω max VS = ±3 V, IS = 1 mA LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source OFF Leakage IS (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see Figure 22 ±0.2 ±5 nA max Drain OFF Leakage ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see Figure 23 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; see Figure 24 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±1 µA max CIN, Digital Input Capacitance 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 80 ns typ RL = 300 Ω, CL = 35 pF 115 140 165 ns max VS = 3 V; see Figure 25 tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF 115 140 165 ns max VS = 3 V; see Figure 27 tOFF (EN) 30 ns typ RL = 300 Ω, CL = 35 pF 45 50 55 ns max VS = 3 V; see Figure 27 Break-Before-Make Time Delay, tBBM 50 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V; see Figure 26 Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω, 4 pC max CL = 1 nF; see Figure 28 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz Channel-to-Channel Crosstalk (ADG659) −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 −3 dB Bandwidth ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 ADG659 400 MHz typ Rev. D | Page 3 of 20 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY 5 V SINGLE SUPPLY 2.7 V TO 3.6 V SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS