Datasheet ADG619, ADG620 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | CMOS, ±5 V/+5 V, 4 Ω, Single SPDT Switches |
| 页数 / 页 | 16 / 3 — ADG619/ADG620. SPECIFICATIONS DUAL SUPPLY. Table 2. B. Version1. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 367 Kb |
| 文件语言 | 英语 |
ADG619/ADG620. SPECIFICATIONS DUAL SUPPLY. Table 2. B. Version1. Parameter. +25°C. −40°C to +85°C. Unit. Test Conditions/Comments
该数据表的模型线
文件文字版本
link to page 4 link to page 11 link to page 11 link to page 11 link to page 4 link to page 11 link to page 11 link to page 11 link to page 11 link to page 11 link to page 11 link to page 11 link to page 12 link to page 12 link to page 12
ADG619/ADG620 SPECIFICATIONS DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2. B Version1 Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance (RON) 4 Ω typ VS = ±4.5 V, IDS = −10 mA; see Figure 15 6.5 8.5 Ω max RON Match Between Channels (ΔRON) 0.7 Ω typ VS = ±4.5 V, IDS = −10 mA 1.1 1.35 Ω max On-Resistance Flatness (RFLAT (ON)) 0.7 0.8 Ω typ VS = ±3.3 V, IDS = −10 mA 1.35 1.4 Ω max LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = ±4.5 V, VD = ∓ 4.5 V; see Figure 16 ±0.25 ±1 nA max Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = ±4.5 V; see Figure 17 ±0.25 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS2 ADG619 tON 80 ns typ RL = 300 Ω, CL = 35 pF 120 155 ns max VS = 3.3 V; see Figure 18 tOFF 45 ns typ RL = 300 Ω, CL = 35 pF 75 90 ns max VS = 3.3 V; see Figure 18 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3.3 V; see Figure 19 ADG620 tON 40 ns typ RL = 300 Ω, CL = 35 pF 65 85 ns max VS = 3.3 V; see Figure 18 tOFF 200 ns typ RL = 300 Ω, CL = 35 pF 330 400 ns max VS = 3.3 V; see Figure 18 Make-Before-Break Time Delay, tMBB 160 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS = 0 V; see Figure 20 Charge Injection 110 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 22 Channel-to-Channel Crosstalk −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 23 Bandwidth −3 dB 190 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24 CS (Off ) 25 pF typ f = 1 MHz CD, CS (On) 95 pF typ f = 1 MHz Rev. C | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
ADG619/ADG620 SPECIFICATIONS DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2. B Version1 Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V On Resistance (RON) 4 Ω typ VS = ±4.5 V, IDS = −10 mA; see Figure 15 6.5 8.5 Ω max RON Match Between Channels (ΔRON) 0.7 Ω typ VS = ±4.5 V, IDS = −10 mA 1.1 1.35 Ω max On-Resistance Flatness (RFLAT (ON)) 0.7 0.8 Ω typ VS = ±3.3 V, IDS = −10 mA 1.35 1.4 Ω max LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = ±4.5 V, VD = ∓ 4.5 V; see Figure 16 ±0.25 ±1 nA max Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = ±4.5 V; see Figure 17 ±0.25 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS2 ADG619 tON 80 ns typ RL = 300 Ω, CL = 35 pF 120 155 ns max VS = 3.3 V; see Figure 18 tOFF 45 ns typ RL = 300 Ω, CL = 35 pF 75 90 ns max VS = 3.3 V; see Figure 18 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3.3 V; see Figure 19 ADG620 tON 40 ns typ RL = 300 Ω, CL = 35 pF 65 85 ns max VS = 3.3 V; see Figure 18 tOFF 200 ns typ RL = 300 Ω, CL = 35 pF 330 400 ns max VS = 3.3 V; see Figure 18 Make-Before-Break Time Delay, tMBB 160 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS = 0 V; see Figure 20 Charge Injection 110 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 22 Channel-to-Channel Crosstalk −67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 23 Bandwidth −3 dB 190 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24 CS (Off ) 25 pF typ f = 1 MHz CD, CS (On) 95 pF typ f = 1 MHz Rev. C | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE