Datasheet ADG786, ADG788 (Analog Devices) - 3

ADG786/ADG788 SPECIFICATIONS1 (VDD = 3 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.) B Version –40 C Parameter +25 C to +85 C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 6 Ω typ VS = 0 V to VDD, IDS = 10 mA; 11 12 Ω max Test Circuit 1 On-Resistance Match between 0.1 Ω typ VS = 0 V to VDD, IDS = 10 mA Channels (ΔRON) 0.5 Ω max On-Resistance Flatness (RFLAT(ON)) 3 Ω typ VS = 0 V to VDD, IDS = 10 mA LEAKAGE CURRENTS VDD = 3.3 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V; ±0.1 ±0.3 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V or 3 V; ±0.1 ±0.5 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS2 tON 28 ns typ RL = 300 Ω, CL = 35 pF; 55 ns max VS1A = 2 V, VS1B = 0 V, Test Circuit 4 tOFF 9 ns typ RL = 300 Ω, CL = 35 pF; 16 ns max VS = 2 V, Test Circuit 4 ADG786 tON(EN) 29 ns typ RL = 300 Ω, CL = 35 pF; 60 ns max VS = 2 V, Test Circuit 5 tOFF(EN) 9 ns typ RL = 300 Ω, CL = 35 pF; 16 ns max VS = 2 V, Test Circuit 5 Break-Before-Make Time Delay, tD 22 ns typ RL = 300 Ω, CL = 35 pF; 1 ns min VS = 2 V, Test Circuit 6 Charge Injection ±3 pC typ VS = 1 V, RS = 0 Ω, CL = 1 nF; Test Circuit 7 Off Isolation –80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 8 Channel-to-Channel Crosstalk –80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 –3 dB Bandwidth 160 MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 10 CS (OFF) 11 pF typ f = 1 MHz CD, CS (ON) 34 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 3.3 V IDD 0.001 μA typ Digital Inputs = 0 V or 3.3 V 1.0 μA max NOTES 1Temperature ranges are as follows: B Version: –40°C to +85°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. –3– $