Datasheet ADG428, ADG429 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | LC2MOS Latchable 4-/8-Channel High Performance Analog Multiplexers |
| 页数 / 页 | 12 / 3 — ADG428/ADG429. SINGLE SUPPLY1 (VDD = +12 V, VSS = 0 V, GND = 0 V, WR = 0 … |
| 修订版 | C |
| 文件格式/大小 | PDF / 164 Kb |
| 文件语言 | 英语 |
ADG428/ADG429. SINGLE SUPPLY1 (VDD = +12 V, VSS = 0 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted). B Version
该数据表的模型线
文件文字版本
ADG428/ADG429 SINGLE SUPPLY1 (VDD = +12 V, VSS = 0 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted) B Version T Version –40
ⴗ
C to –55
ⴗ
C to Parameter +25
ⴗ
C +85
ⴗ
C +25
ⴗ
C +125
ⴗ
C Units Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 to VDD 0 to VDD V RON 90 90 Ω typ VD = +10 V, IS = –500 µA 200 200 Ω max ∆RON 10 10 % max 0 V < VS < 10 V, IS = –1 mA LEAKAGE CURRENTS Source OFF Leakage IS (OFF) ±0.005 ±0.005 nA typ VD = 10 V/0 V, VS = 0 V/10 V; ±0.5 ±50 ±0.5 ±50 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) VD = 10 V/0 V, VS = 0 V/10 V; ADG428 ±0.015 ±0.015 nA typ Test Circuit 3 ±1 ±100 ±1 ±100 nA max ADG429 ±0.008 ±0.008 nA typ ±1 ±50 ±1 ±50 nA max Channel ON Leakage ID, IS (ON) VS = VD = 10 V/0 V; ADG428 ±0.02 ±0.02 nA typ Test Circuit 4 ±1 ±100 ±1 ±100 nA max ADG429 ±0.01 ±0.01 nA max ±1 ±50 ±1 ±50 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current I ± INL or IINH 1 ±1 µA max VIN = 0 or VDD CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz DYNAMIC CHARACTERISTICS2 tTRANSITION 250 250 ns typ RL = 1 MΩ, CL = 35 pF; 350 450 350 450 ns max VS1 = 10 V/0 V, VS8 = 0 V/10 V; Test Circuit 5 tOPEN 25 10 25 10 ns min RL = 1 kΩ, CL = 35 pF; VS = +5 V; Test Circuit 6 tON (EN, WR) 200 200 ns typ RL = 1 kΩ, CL = 35 pF; 300 400 300 400 ns max VS = +5 V; Test Circuit 7 tOFF (EN, RS) 80 80 ns typ RL = 1 kΩ, CL = 35 pF; 300 400 300 400 ns max VS = +5 V; Test Circuit 7 tW, Write Pulsewidth 100 100 ns min tS, Address, Enable Setup Time 100 100 ns min tH, Address, Enable Hold Time 10 10 ns min tRS, Reset Pulsewidth 100 100 ns min VS = +5 V Charge Injection 4 4 pC typ VS = 6 V, RS = 0 Ω, CL = 10 nF; Test Circuit 10 OFF Isolation –75 –75 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; –60 –60 dB min VS = 7 V rms, VEN = 0 V; Test Circuit 11 Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; Test Circuit 12 CS (OFF) 11 11 pF typ f = 1 MHz CD (OFF) f = 1 MHz ADG428 40 40 pF typ ADG429 20 20 pF typ CD, CS (ON) f = 1 MHz ADG428 54 54 pF typ ADG429 34 34 pF typ POWER REQUIREMENTS VIN = 0 V, VEN = 0 V IDD 20 20 µA typ 100 100 µA max NOTES 1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. C –3–
ⴗ
C to –55
ⴗ
C to Parameter +25
ⴗ
C +85
ⴗ
C +25
ⴗ
C +125
ⴗ
C Units Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 to VDD 0 to VDD V RON 90 90 Ω typ VD = +10 V, IS = –500 µA 200 200 Ω max ∆RON 10 10 % max 0 V < VS < 10 V, IS = –1 mA LEAKAGE CURRENTS Source OFF Leakage IS (OFF) ±0.005 ±0.005 nA typ VD = 10 V/0 V, VS = 0 V/10 V; ±0.5 ±50 ±0.5 ±50 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) VD = 10 V/0 V, VS = 0 V/10 V; ADG428 ±0.015 ±0.015 nA typ Test Circuit 3 ±1 ±100 ±1 ±100 nA max ADG429 ±0.008 ±0.008 nA typ ±1 ±50 ±1 ±50 nA max Channel ON Leakage ID, IS (ON) VS = VD = 10 V/0 V; ADG428 ±0.02 ±0.02 nA typ Test Circuit 4 ±1 ±100 ±1 ±100 nA max ADG429 ±0.01 ±0.01 nA max ±1 ±50 ±1 ±50 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current I ± INL or IINH 1 ±1 µA max VIN = 0 or VDD CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz DYNAMIC CHARACTERISTICS2 tTRANSITION 250 250 ns typ RL = 1 MΩ, CL = 35 pF; 350 450 350 450 ns max VS1 = 10 V/0 V, VS8 = 0 V/10 V; Test Circuit 5 tOPEN 25 10 25 10 ns min RL = 1 kΩ, CL = 35 pF; VS = +5 V; Test Circuit 6 tON (EN, WR) 200 200 ns typ RL = 1 kΩ, CL = 35 pF; 300 400 300 400 ns max VS = +5 V; Test Circuit 7 tOFF (EN, RS) 80 80 ns typ RL = 1 kΩ, CL = 35 pF; 300 400 300 400 ns max VS = +5 V; Test Circuit 7 tW, Write Pulsewidth 100 100 ns min tS, Address, Enable Setup Time 100 100 ns min tH, Address, Enable Hold Time 10 10 ns min tRS, Reset Pulsewidth 100 100 ns min VS = +5 V Charge Injection 4 4 pC typ VS = 6 V, RS = 0 Ω, CL = 10 nF; Test Circuit 10 OFF Isolation –75 –75 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; –60 –60 dB min VS = 7 V rms, VEN = 0 V; Test Circuit 11 Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, CL = 15 pF, f = 100 kHz; Test Circuit 12 CS (OFF) 11 11 pF typ f = 1 MHz CD (OFF) f = 1 MHz ADG428 40 40 pF typ ADG429 20 20 pF typ CD, CS (ON) f = 1 MHz ADG428 54 54 pF typ ADG429 34 34 pF typ POWER REQUIREMENTS VIN = 0 V, VEN = 0 V IDD 20 20 µA typ 100 100 µA max NOTES 1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. C –3–