Datasheet TCET1100, TCET1100G (Vishay) - 6

TCET1100, TCET1100G
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 300 10 000 Coupled device V = 20 V CE 250 I = 0 F 1000 200 Phototransistor 150 100 IR-diode 100 10 - Collector Dark Current, 50 with Open Base (nA) - Total Power Dissipation (mW) I CEO totP 0 1 0 40 80 120 0 25 50 75 100 T - Ambient Temperature (°C) 96 11700 T - Ambient Temperature (°C) amb 95 11026 amb Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 V = 5 V CE 100 10 10 1 1 0.1 - Forward Current (mA) - Collector Current (mA) I F I C 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 96 11862 V I - Forward Current (mA) F - Forward Voltage (V) 95 11027 F Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Current vs. Forward Current 2.0 100 20 mA V = 5 V CE I = 5 mA F I = 50 mA F 1.5 10 mA 10 5 mA 1.0 1 2 mA 0.5 - Collector Current (mA) 1 mA I C - Relative Current Transfer Ratio rel 0 0.1 CTR 100 -25 0 25 50 75 0.1 1 10 95 10985 V - Collector Emitter Voltage (V) 95 11025 T - Ambient Temperature (°C) CE amb Fig. 8 - Relative Current Transfer Ratio vs. Fig. 11 - Collector Current vs. Collector Emitter Voltage Ambient Temperature Rev. 2.4, 13-Jan-2021
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