Typical Electrical Characteristics 10 1000 I = 2.7A D V = 5V DS 10V 500 8 C iss 15V 6 200 C oss 100 4 CAPACITANCE (pF) 50 f = 1 MHz 2 C rss V = 0V GS GSV , GATE-SOURCE VOLTAGE (V) 20 0 0.1 0.2 0.5 1 2 5 10 30 0 2 4 6 8 10 V , DRAIN TO SOURCE VOLTAGE (V) Q , GATE CHARGE (nC) DS g Figure 7. Gate Charge Characteristics.Figure 8. Capacitance Characteristics. 30 50 1ms 10 SINGLE PULSE 40 RDS(ON) LIMIT 10ms R =270° C/W θJA 3 T = 25°C A 30 1 100ms 1s 0.3 20 POWER (W) 10s V = 10V GS 0.1 DC SINGLE PULSE I , DRAIN CURRENT (A) D 10 R =270°C/W 0.03 θJA T = 25°C A 0 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 0.1 0.2 0.5 1 2 5 10 20 30 50 SINGLE PULSE TIME (SEC) V , DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area.Figure 10. Single Pulse Maximum PowerDissipation. 1 D = 0.5 0.5 0.2 R (t) = r(t) * R 0.2 θJA θJA R = 270 °C/W 0.1 θJA 0.1 0.05 0.05 P(pk) 0.02 0.02 0.01 t 1 0.01 t Single Pulse 2 0.005 T - T = P * R (t) J A θJA r(t), NORMALIZED EFFECTIVE Duty Cycle, D = t /t 1 2 0.002 TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4