Datasheet CMPD6263, CMPD6263A, CMPD6263C, CMPD6263S (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT SILICON SCHOTTKY DIODES |
| 页数 / 页 | 5 / 1 — CMPD6263. CMPD6263A. CMPD6263C. CMPD6263S. www.centra lsemi.com. … |
| 文件格式/大小 | PDF / 766 Kb |
| 文件语言 | 英语 |
CMPD6263. CMPD6263A. CMPD6263C. CMPD6263S. www.centra lsemi.com. DESCRIPTION:. SURFACE MOUNT SILICON. SCHOTTKY DIODES. SOT-23 CASE
该数据表的模型线
文件文字版本
CMPD6263 CMPD6263A CMPD6263C CMPD6263S www.centra lsemi.com DESCRIPTION: SURFACE MOUNT SILICON
The CENTRAL SEMICONDUCTOR CMPD6263 series
SCHOTTKY DIODES
devices are silicon Schottky diodes designed for low current surface mount fast switching applications requiring a low forward voltage drop.
SOT-23 CASE
The following configurations are available: CMPD6263 SINGLE
MARKING CODE: D76
CMPD6263A DUAL, COMMON ANODE
MARKING CODE: D98
CMPD6263C DUAL, COMMON CATHODE
MARKING CODE: D97
CMPD6263S DUAL, IN SERIES
MARKING CODE: D96 MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 70 V Continuous Forward Current IF 15 mA Peak Forward Surge Current, tp=1.0s IFSM 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=50V 10 200 nA BVR IR=10µA 70 V VF IF=1.0mA 395 410 mV CJ VR=0, f=1.0MHz 2.0 pF R7 (11-December 2015)
The CENTRAL SEMICONDUCTOR CMPD6263 series
SCHOTTKY DIODES
devices are silicon Schottky diodes designed for low current surface mount fast switching applications requiring a low forward voltage drop.
SOT-23 CASE
The following configurations are available: CMPD6263 SINGLE
MARKING CODE: D76
CMPD6263A DUAL, COMMON ANODE
MARKING CODE: D98
CMPD6263C DUAL, COMMON CATHODE
MARKING CODE: D97
CMPD6263S DUAL, IN SERIES
MARKING CODE: D96 MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 70 V Continuous Forward Current IF 15 mA Peak Forward Surge Current, tp=1.0s IFSM 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=50V 10 200 nA BVR IR=10µA 70 V VF IF=1.0mA 395 410 mV CJ VR=0, f=1.0MHz 2.0 pF R7 (11-December 2015)