Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 4
制造商 | ON Semiconductor |
描述 | Complementary General Purpose Transistor |
页数 / 页 | 13 / 4 — MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). Figure 5. Turn-On Time. Figure 6. … |
修订版 | 7 |
文件格式/大小 | PDF / 251 Kb |
文件语言 | 英语 |
MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). Figure 5. Turn-On Time. Figure 6. Rise Time. Figure 7. Storage Time. Figure 8. Fall Time
该数据表的模型线
文件文字版本
MBT3946DW1T1G, SMBT3946DW1T1G (NPN)
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 (NPN) (NPN) 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 (NPN) 10 (NPN) 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 W f = 1.0 kHz I I 12 C = 1.0 mA 10 C = 1.0 mA 10 IC = 0.5 mA 8 SOURCE RESISTANCE = 200 W IC = 50 mA IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 100 mA 6 IC = 50 mA , NOISE FIGURE (dB) 4 , NOISE FIGURE (dB) NF NF 4 2 SOURCE RESISTANCE = 500 W 2 I (NPN) (NPN) C = 100 mA 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 4