Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 9

MBT3946DW1T1G, SMBT3946DW1T1G (PNP) TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C 0.7 -55°C GAIN (NORMALIZED) 0.5 0.3 (PNP) 0.2 FEh , DC CURRENT 0.10.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain
1.0 TS) T (PNP) J = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 33. Collector Saturation Region
1.0 1.0 T ° J = 25°C VBE(sat) @ IC/IB = 10 0.8 0.5 +25°C TO +125°C q V VC FOR VCE(sat) BE @ VCE = 1.0 V TS) 0 0.6 -55°C TO +25°C (PNP) -0.5 (PNP) TAGE (VOL 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ C) V -1.0 VCE(sat) @ IC/IB = 10 -55°C TO +25°C 0.2 -1.5 qVB FOR VBE(sat) , TEMPERA Vq 0 -2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 34. “ON” Voltages Figure 35. Temperature Coefficients http://onsemi.com 9