Datasheet 2N5087 (ON Semiconductor) - 6
| 制造商 | ON Semiconductor |
| 描述 | Amplifier Transistor PNP Silicon |
| 页数 / 页 | 8 / 6 — 2N5087. TYPICAL DYNAMIC CHARACTERISTICS. Figure 11. Turn−On Time. Figure … |
| 修订版 | 5 |
| 文件格式/大小 | PDF / 259 Kb |
| 文件语言 | 英语 |
2N5087. TYPICAL DYNAMIC CHARACTERISTICS. Figure 11. Turn−On Time. Figure 12. Turn−Off Time
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2N5087 TYPICAL DYNAMIC CHARACTERISTICS
500 1000 V V 700 CC = - 3.0 V 300 CC = 3.0 V I I C/IB = 10 500 C/IB = 10 200 T I J = 25°C B1 = IB2 t 300 s TJ = 25°C 100 200 70 50 100 t, TIME (ns) 30 t, TIME (ns) 70 t 50 20 r tf t 30 d @ VBE(off) = 0.5 V 10 20 7.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time Figure 12. Turn−Off Time
500 10 T T J = 25°C J = 25°C 7.0 300 VCE = 20 V Cib 5.0 5.0 V (pF) 200 ANCE 3.0 ACIT 100 2.0 Cob C, CAP 70 50 1.0 f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) T 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance
20 200 VCE = -10 Vdc VCE = 10 Vdc 10 f = 1.0 kHz f = 1.0 kHz ) 100 Ω T T 7.0 A = 25°C m 70 A = 25°C 5.0 50 ANCE ( mhos) 3.0 30 2.0 20 ADMITT 1.0 10 , INPUT IMPEDANCE (k 0.7 7.0 ieh 0.5 5.0 h , OUTPUT oe 0.3 3.0 0.2 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5
500 1000 V V 700 CC = - 3.0 V 300 CC = 3.0 V I I C/IB = 10 500 C/IB = 10 200 T I J = 25°C B1 = IB2 t 300 s TJ = 25°C 100 200 70 50 100 t, TIME (ns) 30 t, TIME (ns) 70 t 50 20 r tf t 30 d @ VBE(off) = 0.5 V 10 20 7.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time Figure 12. Turn−Off Time
500 10 T T J = 25°C J = 25°C 7.0 300 VCE = 20 V Cib 5.0 5.0 V (pF) 200 ANCE 3.0 ACIT 100 2.0 Cob C, CAP 70 50 1.0 f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) T 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance
20 200 VCE = -10 Vdc VCE = 10 Vdc 10 f = 1.0 kHz f = 1.0 kHz ) 100 Ω T T 7.0 A = 25°C m 70 A = 25°C 5.0 50 ANCE ( mhos) 3.0 30 2.0 20 ADMITT 1.0 10 , INPUT IMPEDANCE (k 0.7 7.0 ieh 0.5 5.0 h , OUTPUT oe 0.3 3.0 0.2 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5