Datasheet 2N5088, 2N5089, MMBT5088, MMBT5089 (ON Semiconductor) - 5

(continued) Typical Characteristics (continued) Input and Output Capacitance
vs Reverse Bias Voltage Contours of Constant Gain
Bandwidth Product (f T )
V CE -COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz
4
3
C te 2
C ob 1 ° 0 4 8
12
16
REVERSE BIAS VOLTAGE (V) 20 175 MHz 7
5 150 MHz 3
2 125 MHz
100 MHz
75 MHz 1
0.1 Normalized Collector-Cutoff Current
vs Ambient Temperature 1000 100 5
V CE = 5.0 V 100 10 1
25 50
75
100
125
T A -AMBIE NT TEMPERATURE ( °C) 4 BANDWIDTH = 15.7 kHz I C = 30 µA 2
1 I C = 10 µA 0 150 1,000 P D -POWER DISSIPATION (mW) I C = 1.0 mA,
R S = 500 Ω
I C = 1.0 mA,
R S = 5.0 kΩ 2
V CE = 5.0V
0
0.0001 0.01
0.1
1
f -FREQUENCY (MHz) 20,000 50,000 100,000 TO-92
500 10 100 SOT-23 375
250
125
0 0.001 10,000 625 I C = 100 µA,
R S = 10 kΩ 4 5,000 Power Dissipation vs
Ambient Temperature I C = 200 µA,
R S = 10 kΩ 6 2,000 R S -SOURCE RESISTANCE (Ω ) 10 8 3 I C = 100 µA 3 Noise Figure vs Frequency NF -NOISE FIGURE (dB) 1
10
I C -COLLECTOR CURRENT (mA) Wideband Noise Frequency
vs Source Resistance
NF -NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 0 10 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier 0 25 50
75
100
TEMPERATURE ( o C) 125 150