Datasheet MPS3646 (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | Switching Transistor NPN Silicon |
| 页数 / 页 | 8 / 5 — MPS3646. DYNAMIC CHARACTERISTICS. Figure 7. Delay Time. Figure 8. Rise … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 183 Kb |
| 文件语言 | 英语 |
MPS3646. DYNAMIC CHARACTERISTICS. Figure 7. Delay Time. Figure 8. Rise Time. Figure 9. Storage Time. Figure 10. Fall Time
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MPS3646 DYNAMIC CHARACTERISTICS
200 200 VCC = 10 V IC/IB = 10 T TJ = 25°C 100 J = 25°C 100 TJ = 125°C 70 70 VCC = 10 V 50 td @ VEB(off) = 3 V 50 Y TIME (ns) 30 TIME (ns) 30 2 V 20 , DELA , RISE 20 VCC = 3 V t d t r 10 0 V 10 7.0 7.0 5.0 5.0 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Delay Time Figure 8. Rise Time
50 200 TJ = 25°C VCC = 10 V TJ = 125°C TJ = 25°C 100 30 IC/IB = 20 TJ = 125°C IC/IB = 10 70 50 TIME (ns) 20 TIME (ns) 30 IC/IB = 20 ORAGE ALL , F 20 , ST t f t s 10 IC/IB = 10 10 7.0 ts′ ^ ts − 1/8 tf IB1 = IB2 7.0 5.0 5.0 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Storage Time Figure 10. Fall Time
10 1000 MAX 700 IC/IB = 10 TYP 500 TJ = 25°C 7.0 Cibo TJ = 125°C 300 5.0 200 ANCE (pF) QT ACIT 100 V CAP Q, CHARGE (pC) CC = 3 V 70 Cobo 3.0 50 VCC = 10 V QA 30 VCC = 3 V 2.0 20 0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (Vdc) IC, COLLECTOR CURRENT (mA)
Figure 11. Junction Capacitance Figure 12. Maximum Charge Data http://onsemi.com 4
200 200 VCC = 10 V IC/IB = 10 T TJ = 25°C 100 J = 25°C 100 TJ = 125°C 70 70 VCC = 10 V 50 td @ VEB(off) = 3 V 50 Y TIME (ns) 30 TIME (ns) 30 2 V 20 , DELA , RISE 20 VCC = 3 V t d t r 10 0 V 10 7.0 7.0 5.0 5.0 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Delay Time Figure 8. Rise Time
50 200 TJ = 25°C VCC = 10 V TJ = 125°C TJ = 25°C 100 30 IC/IB = 20 TJ = 125°C IC/IB = 10 70 50 TIME (ns) 20 TIME (ns) 30 IC/IB = 20 ORAGE ALL , F 20 , ST t f t s 10 IC/IB = 10 10 7.0 ts′ ^ ts − 1/8 tf IB1 = IB2 7.0 5.0 5.0 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Storage Time Figure 10. Fall Time
10 1000 MAX 700 IC/IB = 10 TYP 500 TJ = 25°C 7.0 Cibo TJ = 125°C 300 5.0 200 ANCE (pF) QT ACIT 100 V CAP Q, CHARGE (pC) CC = 3 V 70 Cobo 3.0 50 VCC = 10 V QA 30 VCC = 3 V 2.0 20 0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (Vdc) IC, COLLECTOR CURRENT (mA)
Figure 11. Junction Capacitance Figure 12. Maximum Charge Data http://onsemi.com 4