Datasheet SUD19N20-90 (Vishay)
| 制造商 | Vishay |
| 描述 | N-Channel 200 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 8 / 1 — SUD19N20-90. N-Channel 200 V (D-S) 175 °C MOSFET. FEATURES. PRODUCT … |
| 文件格式/大小 | PDF / 171 Kb |
| 文件语言 | 英语 |
SUD19N20-90. N-Channel 200 V (D-S) 175 °C MOSFET. FEATURES. PRODUCT SUMMARY. VDS (V). RDS(on) (. ID (A). APPLICATIONS. T O-252
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文件文字版本
SUD19N20-90
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) RDS(on) ( ) ID (A)
• 175 °C Junction Temperature 0.090 at VGS = 10 V 19 200 • PWM Optimized 0.105 at VGS = 6 V 17.5 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
T O-252
D Drain Connected to T a b G G D S T op V i e w S
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TC = 25 °C 19 Continuous Drain Current (T I J = 175 °C)b D TC = 125 °C 11 Pulsed Drain Current IDM 40 A Continuous Source Current (Diode Conduction) IS 19 Avalanche Current IAS 19 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ TC = 25 °C 136b Maximum Power Dissipation PD W TA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t 10 s 15 18 Junction-to-Ambienta RthJA Steady State 40 50 °C/W Junction-to-Case (Drain) RthJC 0.85 1.1 Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71767 www.vishay.com S10-2245-Rev. E, 04-Oct-10 1
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) RDS(on) ( ) ID (A)
• 175 °C Junction Temperature 0.090 at VGS = 10 V 19 200 • PWM Optimized 0.105 at VGS = 6 V 17.5 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
T O-252
D Drain Connected to T a b G G D S T op V i e w S
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TC = 25 °C 19 Continuous Drain Current (T I J = 175 °C)b D TC = 125 °C 11 Pulsed Drain Current IDM 40 A Continuous Source Current (Diode Conduction) IS 19 Avalanche Current IAS 19 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ TC = 25 °C 136b Maximum Power Dissipation PD W TA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t 10 s 15 18 Junction-to-Ambienta RthJA Steady State 40 50 °C/W Junction-to-Case (Drain) RthJC 0.85 1.1 Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71767 www.vishay.com S10-2245-Rev. E, 04-Oct-10 1