Datasheet SRC1204 (AUK Semiconductor)
| 制造商 | AUK Semiconductor |
| 描述 | NPN Silicon Transistor |
| 页数 / 页 | 4 / 1 — SRC1204. NPN Silicon Transistor. Descriptions. PIN Connection. 2. OUT. … |
| 文件格式/大小 | PDF / 203 Kb |
| 文件语言 | 英语 |
SRC1204. NPN Silicon Transistor. Descriptions. PIN Connection. 2. OUT. Features. 3. IN. 1 2 3. 47K. 1. COMMON. Ordering Information
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文件文字版本
SRC1204 NPN Silicon Transistor Descriptions PIN Connection
• Switching application
2. OUT
• Interface circuit and driver circuit application
Features 3. IN R1
• With built-in bias resistors • Simplify circuit design
1 2 3
• Reduce a quantity of parts and manufacturing process
R2
• High packing density
R1 R2 47K
Ω
47K
Ω
1. COMMON Ordering Information Type NO. Marking Package Code
SRC1204 SRC1204 TO-92
Absolute Maximum Ratings (Ta=25
°
C) Characteristic Symbol Rating Unit
Output voltage VO 50 V Input voltage VI 40,-10 V Output current IO 100 mA Power dissipation PD 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55 ~ 150 °C
Electrical Characteristics (Ta=25
°
C) Characteristic Symbol Test Condition Min. Typ. Max. Unit
Output cut-off current IO(OFF) VO=50V, VI=0 - - 500 nA DC current gain GI VO=5V, IO=10mA 80 200 - - Output voltage VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V Input voltage (ON) VI(ON) VO=0.2V, IO=5mA - 2.8 5.0 V Input voltage (OFF) VI(OFF) VO=5V, IO=0.1mA 1.0 1.2 - V Transition frequency f * T VO=10V, IO=5mA, f=1MHz - 200 - MHz Input current II VI=5V, IO=0 - - 0.18 mA Input resistor (Input to base) R1 - 33 47 61 KΩ Input resistor (Base to common) R2 - 33 47 61 KΩ * : Characteristic of transistor only KSD-R0A004-000 1
• Switching application
2. OUT
• Interface circuit and driver circuit application
Features 3. IN R1
• With built-in bias resistors • Simplify circuit design
1 2 3
• Reduce a quantity of parts and manufacturing process
R2
• High packing density
R1 R2 47K
Ω
47K
Ω
1. COMMON Ordering Information Type NO. Marking Package Code
SRC1204 SRC1204 TO-92
Absolute Maximum Ratings (Ta=25
°
C) Characteristic Symbol Rating Unit
Output voltage VO 50 V Input voltage VI 40,-10 V Output current IO 100 mA Power dissipation PD 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55 ~ 150 °C
Electrical Characteristics (Ta=25
°
C) Characteristic Symbol Test Condition Min. Typ. Max. Unit
Output cut-off current IO(OFF) VO=50V, VI=0 - - 500 nA DC current gain GI VO=5V, IO=10mA 80 200 - - Output voltage VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V Input voltage (ON) VI(ON) VO=0.2V, IO=5mA - 2.8 5.0 V Input voltage (OFF) VI(OFF) VO=5V, IO=0.1mA 1.0 1.2 - V Transition frequency f * T VO=10V, IO=5mA, f=1MHz - 200 - MHz Input current II VI=5V, IO=0 - - 0.18 mA Input resistor (Input to base) R1 - 33 47 61 KΩ Input resistor (Base to common) R2 - 33 47 61 KΩ * : Characteristic of transistor only KSD-R0A004-000 1