Datasheet NTE243, NTE244 (NTE Electronics)
| 制造商 | NTE Electronics |
| 描述 | Silicon Complementary Transistors Darlington Power Amplifier |
| 页数 / 页 | 2 / 1 — NTE243 (NPN) & NTE244 (PNP). Silicon Complementary Transistors. … |
| 文件格式/大小 | PDF / 27 Kb |
| 文件语言 | 英语 |
NTE243 (NPN) & NTE244 (PNP). Silicon Complementary Transistors. Darlington Power Amplifier. Description:. Features:
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NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . 80V Collector–Base Voltage, VCB . 80V Emitter–Base Voltage, VEB . 5V Collector Current, IC Continuous . 8A Peak . 16A Base Current, IB . 120mA Total Power Dissipation (TC = +25°C), PD . 100W Derate Above 25°C . 0.571W/°C Operating Junction Temperature Range, TJ . –65° to +200°C Storage Temperature Range, Tstg . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . 1.78°C/W
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector–Emitter SustainingVoltage VCEO(sus) IC = 100mA, IB = 0, Note 1 80 – – V Collector Cutoff Current ICEO VCE = 40V, IE = 0 – – 0.5 mA ICEX VCE = 80V, VBE(off) = 1.5V – – 0.5 mA VCE = 80V, VBE(off) = 1.5V, TA = +150°C – – 5.0 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . 80V Collector–Base Voltage, VCB . 80V Emitter–Base Voltage, VEB . 5V Collector Current, IC Continuous . 8A Peak . 16A Base Current, IB . 120mA Total Power Dissipation (TC = +25°C), PD . 100W Derate Above 25°C . 0.571W/°C Operating Junction Temperature Range, TJ . –65° to +200°C Storage Temperature Range, Tstg . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . 1.78°C/W
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector–Emitter SustainingVoltage VCEO(sus) IC = 100mA, IB = 0, Note 1 80 – – V Collector Cutoff Current ICEO VCE = 40V, IE = 0 – – 0.5 mA ICEX VCE = 80V, VBE(off) = 1.5V – – 0.5 mA VCE = 80V, VBE(off) = 1.5V, TA = +150°C – – 5.0 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%