Datasheet STTH1L06 (STMicroelectronics) - 2
| 制造商 | STMicroelectronics |
| 描述 | Turbo 2 ultrafast high voltage rectifier |
| 页数 / 页 | 9 / 2 — Characteristics. STTH1L06. 1 Characteristics. Table 2. Absolute ratings … |
| 文件格式/大小 | PDF / 112 Kb |
| 文件语言 | 英语 |
Characteristics. STTH1L06. 1 Characteristics. Table 2. Absolute ratings (limiting values). Symbol. Parameter. Value. Unit. Table 3
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Characteristics STTH1L06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 600 V DO-41 10 IF(RMS) Forward rms voltage A SMA / SMB 7 DO-41 Tc = 120 °C IF(AV) Average forward current δ = 0.5 SMA T 1 A c = 135 °C SMB Tc = 145 °C t 30 I p = 10 ms sinusoidal DO-41 FSM Surge non repetitive forward current A tp = 10 ms sinusoidal SMA / SMB 20 Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C
Table 3. Thermal parameters Symbol Parameter Value (max) Unit
L = 10 mm DO-41 45 Rth(j-l) Junction to lead SMA 30 °C/W SMB 25 Rth(j-a) Junction to ambient (1) L = 10 mm DO-41 70 1. Rth(j-a) is measured with a copper area S = 5 cm2 (see Figure 14.)
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C 1 IR Reverse leakage current VR = 600 V µA Tj = 150 °C 10 75 Tj = 25 °C 1.3 VF Forward voltage drop IF = 1 A V Tj = 150 °C 0.85 1.05 To evaluate the conduction losses use the following equation: P = 0.89 x I 2 F(AV) + 0.165 IF (RMS) 2/9 Doc ID 8321 Rev 4 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history
Characteristics STTH1L06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 600 V DO-41 10 IF(RMS) Forward rms voltage A SMA / SMB 7 DO-41 Tc = 120 °C IF(AV) Average forward current δ = 0.5 SMA T 1 A c = 135 °C SMB Tc = 145 °C t 30 I p = 10 ms sinusoidal DO-41 FSM Surge non repetitive forward current A tp = 10 ms sinusoidal SMA / SMB 20 Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C
Table 3. Thermal parameters Symbol Parameter Value (max) Unit
L = 10 mm DO-41 45 Rth(j-l) Junction to lead SMA 30 °C/W SMB 25 Rth(j-a) Junction to ambient (1) L = 10 mm DO-41 70 1. Rth(j-a) is measured with a copper area S = 5 cm2 (see Figure 14.)
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C 1 IR Reverse leakage current VR = 600 V µA Tj = 150 °C 10 75 Tj = 25 °C 1.3 VF Forward voltage drop IF = 1 A V Tj = 150 °C 0.85 1.05 To evaluate the conduction losses use the following equation: P = 0.89 x I 2 F(AV) + 0.165 IF (RMS) 2/9 Doc ID 8321 Rev 4 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history