Datasheet MBRS130LT3G, SBRS8130LT3G, SBRS8130LN (ON Semiconductor) - 2

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MBRS130LT3G, SBRS8130LT3G, SBRS8130LN MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A TL = 120°C 1.0 TL = 110°C 2.0 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, YJL °C/W Junction−to−Lead 12 Thermal Resistance, RqJA °C/W Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper) 228.8 Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper) 71.3
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1) VF V (iF = 1.0 A, TJ = 25°C) 0.395 (iF = 2.0 A, TJ = 25°C) 0.445 Maximum Instantaneous Reverse Current (Note 1) IR mA (Rated dc Voltage, TJ = 25°C) 1.0 (Rated dc Voltage, TJ = 100°C) 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. 10 10 ARD W TJ = 100°C ARD CURRENT W TJ = 100°C 1 1 ANEOUS FOR (A) 25°C ANT CURRENT (A) 25°C ANEOUS FOR ANT 0.1 0.1 , INST 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 , MAXIMUM INST 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 I F I F VF, INSTANTANEOUS VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2