Datasheet TLP5212 (Toshiba) - 3
| 制造商 | Toshiba |
| 描述 | Photocouplers Infrared LED & Photo IC |
| 页数 / 页 | 25 / 3 — 5. Internal Circuit (Note). 6. Principle of Operation. 6.1. Truth Table. … |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
5. Internal Circuit (Note). 6. Principle of Operation. 6.1. Truth Table. 6.2. Mechanical Parameters
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TLP5212
5. Internal Circuit (Note)
Note : Bypass capacitors (1 μF) must be connected between pin 13 (VCC2) and 16 (VE) to stabilize the operation of the high gain linear amplifier. When VE – VEE > 0 V (with negative gate drive), another bypass capacitor (1 μF) must be connected between pin 9 or 12 (VEE) and 16 (VE). Failure to provide the bypassing may impair the switching property. The total lead length between each capacitor and the coupler should not exceed 1 cm.
6. Principle of Operation 6.1. Truth Table
Input Over current protection Feedback function IGBT Gate Current Under Voltage Lock Out DESAT FAULT voltage I UVLO ( VCC2 - VE ) F ( Pin14 input ) ( Pin3 output ) VOUT ON Active ( < V - UVLO ) Not Active High Low ON Not Active ( > V + UVLO ) Active (with DESAT fault) Low (FAULT) Low ON Not Active ( > V + UVLO ) Active (no DESAT fault) High High OFF Active ( < V - UVLO ) Not Active High Low OFF Not Active ( > V + UVLO ) Not Active High Low
6.2. Mechanical Parameters
Characteristics Dimensions Unit Creepage distances 8.0 (min) Clearance distances mm Internal isolation thickness 0.4 (min) ©2022 3 2022-03-02 Toshiba Electronic Devices & Storage Corporation. Rev.1.0
5. Internal Circuit (Note)
Note : Bypass capacitors (1 μF) must be connected between pin 13 (VCC2) and 16 (VE) to stabilize the operation of the high gain linear amplifier. When VE – VEE > 0 V (with negative gate drive), another bypass capacitor (1 μF) must be connected between pin 9 or 12 (VEE) and 16 (VE). Failure to provide the bypassing may impair the switching property. The total lead length between each capacitor and the coupler should not exceed 1 cm.
6. Principle of Operation 6.1. Truth Table
Input Over current protection Feedback function IGBT Gate Current Under Voltage Lock Out DESAT FAULT voltage I UVLO ( VCC2 - VE ) F ( Pin14 input ) ( Pin3 output ) VOUT ON Active ( < V - UVLO ) Not Active High Low ON Not Active ( > V + UVLO ) Active (with DESAT fault) Low (FAULT) Low ON Not Active ( > V + UVLO ) Active (no DESAT fault) High High OFF Active ( < V - UVLO ) Not Active High Low OFF Not Active ( > V + UVLO ) Not Active High Low
6.2. Mechanical Parameters
Characteristics Dimensions Unit Creepage distances 8.0 (min) Clearance distances mm Internal isolation thickness 0.4 (min) ©2022 3 2022-03-02 Toshiba Electronic Devices & Storage Corporation. Rev.1.0