Datasheet IRLR8743PbF, IRLU8743PbF (Infineon)
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 12 / 1 — Applications. DSS. RDS(on) max. 30V. 3.1m. 39nC. Benefits. Absolute … |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 387 Kb |
| 文件语言 | 英语 |
Applications. DSS. RDS(on) max. 30V. 3.1m. 39nC. Benefits. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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文件文字版本
PD - 96123 IRLR8743PbF IRLU8743PbF
Applications
HEXFET® Power MOSFET l High Frequency Synchronous Buck
V
Converters for Computer Processor Power
DSS RDS(on) max Qg
l High Frequency Isolated DC-DC
30V 3.1m
:
39nC
Converters with Synchronous Rectification for Telecom and Industrial Use D l Lead-Free
Benefits
S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR8743PbF IRLU8743PbF
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f A I Pulsed Drain Current DM c 640 PD @TC = 25°C Maximum Power Dissipation g 135 W PD @TC = 100°C Maximum Power Dissipation g 68 Linear Derating Factor 0.90 W/°C TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.11 Rθ Junction-to-Ambient (PCB Mount) JA g ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Notes through are on page 11 www.irf.com 1 08/15/07
Applications
HEXFET® Power MOSFET l High Frequency Synchronous Buck
V
Converters for Computer Processor Power
DSS RDS(on) max Qg
l High Frequency Isolated DC-DC
30V 3.1m
:
39nC
Converters with Synchronous Rectification for Telecom and Industrial Use D l Lead-Free
Benefits
S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR8743PbF IRLU8743PbF
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f A I Pulsed Drain Current DM c 640 PD @TC = 25°C Maximum Power Dissipation g 135 W PD @TC = 100°C Maximum Power Dissipation g 68 Linear Derating Factor 0.90 W/°C TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.11 Rθ Junction-to-Ambient (PCB Mount) JA g ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Notes through are on page 11 www.irf.com 1 08/15/07