Datasheet BAS116 (Nexperia) - 2
| 制造商 | Nexperia |
| 描述 | Low-leakage diode |
| 页数 / 页 | 10 / 2 — Nexperia. BAS116. Low-leakage diode. 6. Ordering information Table 3. … |
| 修订版 | 05082020 |
| 文件格式/大小 | PDF / 205 Kb |
| 文件语言 | 英语 |
Nexperia. BAS116. Low-leakage diode. 6. Ordering information Table 3. Ordering information. Type number. Package Name. Description
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Nexperia BAS116 Low-leakage diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
BAS116 SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body
7. Marking Table 4. Marking codes Type number Marking code[1]
BAS116 JV% [1] % = placeholder for manufacturing site code
8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse Tj = 25 °C - 85 V voltage VR reverse voltage - 75 V IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 215 mA IFSM non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - 4 A forward current tp = 1 ms; square wave; Tj(init) = 25 °C - 1 A tp = 1 s; square wave; Tj(init) = 25 °C - 0.5 A IFRM repetitive peak forward - 500 mA current Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Per device, one diode loaded
Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 5 August 2020 2 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
Nexperia BAS116 Low-leakage diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
BAS116 SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body
7. Marking Table 4. Marking codes Type number Marking code[1]
BAS116 JV% [1] % = placeholder for manufacturing site code
8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse Tj = 25 °C - 85 V voltage VR reverse voltage - 75 V IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 215 mA IFSM non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - 4 A forward current tp = 1 ms; square wave; Tj(init) = 25 °C - 1 A tp = 1 s; square wave; Tj(init) = 25 °C - 0.5 A IFRM repetitive peak forward - 500 mA current Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Per device, one diode loaded
Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 5 August 2020 2 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents