Datasheet Si1308EDL (Vishay)
| 制造商 | Vishay |
| 描述 | N-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 11 / 1 — Si1308EDL. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. VDS … |
| 文件格式/大小 | PDF / 260 Kb |
| 文件语言 | 英语 |
Si1308EDL. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. VDS (V). RDS(on) (. ) MAX. ID (A) c. Qg (TYP.). SOT-323. SC-70 (3 leads)
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文件文字版本
Si1308EDL
www.vishay.com Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V) RDS(on) (
Ω
) MAX. ID (A) c Qg (TYP.)
• 100 % Rg tested 0.132 at VGS = 10 V 1.5 30 0.144 at VGS = 4.5 V 1.4 1.4 nC • Typical ESD performance 1800 V 0.185 at VGS = 2.5 V 1.3 • Material categorization: for definitions of compliance please see
SOT-323
www.vishay.com/doc?99912
SC-70 (3 leads)
D
APPLICATIONS
3 • Smart phones, tablet PC’s D - DC/DC converters - Boost converters - Load switch, OVP switch 2 S G 1 G Top View
Marking Code
: KG S
Ordering Information
: N-Channel MOSFET Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 TC = 25 °C 1.4 TC = 70 °C 1.1 Continuous Drain Current (TJ = 150 °C) ID TA = 25 °C 1.5 a, b TA = 70 °C 1.2 a, b A Pulsed Drain Current (t = 300 μs) IDM 6 TC = 25 °C 0.4 Continuous Source-Drain Diode Current IS TA = 25 °C 0.3 TC = 25 °C 0.5 TC = 70 °C 0.3 Maximum Power Dissipation PD W TA = 25 °C 0.4 a, b TA = 70 °C 0.3 a, b Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak Temperature) 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient a, d t ≤ 10 s RthJA 250 300 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 225 270
Notes
a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state conditions is 360 °C/W. S14-1997-Rev. C, 06-Oct-14
1
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V) RDS(on) (
Ω
) MAX. ID (A) c Qg (TYP.)
• 100 % Rg tested 0.132 at VGS = 10 V 1.5 30 0.144 at VGS = 4.5 V 1.4 1.4 nC • Typical ESD performance 1800 V 0.185 at VGS = 2.5 V 1.3 • Material categorization: for definitions of compliance please see
SOT-323
www.vishay.com/doc?99912
SC-70 (3 leads)
D
APPLICATIONS
3 • Smart phones, tablet PC’s D - DC/DC converters - Boost converters - Load switch, OVP switch 2 S G 1 G Top View
Marking Code
: KG S
Ordering Information
: N-Channel MOSFET Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 TC = 25 °C 1.4 TC = 70 °C 1.1 Continuous Drain Current (TJ = 150 °C) ID TA = 25 °C 1.5 a, b TA = 70 °C 1.2 a, b A Pulsed Drain Current (t = 300 μs) IDM 6 TC = 25 °C 0.4 Continuous Source-Drain Diode Current IS TA = 25 °C 0.3 TC = 25 °C 0.5 TC = 70 °C 0.3 Maximum Power Dissipation PD W TA = 25 °C 0.4 a, b TA = 70 °C 0.3 a, b Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak Temperature) 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient a, d t ≤ 10 s RthJA 250 300 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 225 270
Notes
a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state conditions is 360 °C/W. S14-1997-Rev. C, 06-Oct-14
1
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000