Datasheet MBR2090CT-M3, MBR20100CT-M3 (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| 页数 / 页 | 4 / 3 — MBR2090CT-M3, MBR20100CT-M3. PACKAGE OUTLINE DIMENSIONS. TO-220AB |
| 文件格式/大小 | PDF / 121 Kb |
| 文件语言 | 英语 |
MBR2090CT-M3, MBR20100CT-M3. PACKAGE OUTLINE DIMENSIONS. TO-220AB
该数据表的模型线
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MBR2090CT-M3, MBR20100CT-M3
www.vishay.com Vishay General Semiconductor 100 10 000 T = 25 °C J f = 1 MHz T = 150 °C V = 50 mVp-p J sig 10 1000 T = 125 °C J ard Current (A) rw 1 o 100 0.1 T = 25 °C nction Capacitance (pF) J u J Instantaneous F 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 T = 150 °C J Junction to Case 10 (°C/W) T = 125 °C J 10 1 rse Current (mA) e v Impedance 0.1 mal 1 0.01 T = 25 °C ansient Ther Instantaneous Re J r T 0.001 0.1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) Revision: 11-May-16
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Document Number: 89192 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor 100 10 000 T = 25 °C J f = 1 MHz T = 150 °C V = 50 mVp-p J sig 10 1000 T = 125 °C J ard Current (A) rw 1 o 100 0.1 T = 25 °C nction Capacitance (pF) J u J Instantaneous F 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 T = 150 °C J Junction to Case 10 (°C/W) T = 125 °C J 10 1 rse Current (mA) e v Impedance 0.1 mal 1 0.01 T = 25 °C ansient Ther Instantaneous Re J r T 0.001 0.1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) Revision: 11-May-16
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Document Number: 89192 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000