Datasheet IRL3103PbF (International Rectifier) - 6
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 198 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRL3103PbF 240 15V J) ID m ( TOP 14A 200 gy 24A DRIVER er BOTTOM 34A L VDS 160 che En RG D.U.T + - VDD IAS A alan 120 20V VGS t 0.01 p Ω e Av ls
Fig 12a.
Unclamped Inductive Test Circuit 80 gle Pu V 40 (BR)DSS Sin tp E , AS 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit 80 gle Pu V 40 (BR)DSS Sin tp E , AS 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com